NXP Semiconductors - PSMN3R9-60XSQ

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PSMN3R9-60XSQ by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN3R9-60XSQ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 75 A;
Datasheet PSMN3R9-60XSQ Datasheet
In Stock3,553
NAME DESCRIPTION
Other Names: PSMN3R9-60XSQ-ND
568-11430-5
934068135127
Maximum Power Dissipation (Abs): 55 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 75 A
Maximum Drain Current (Abs) (ID): 75 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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Pricing (USD)

Qty. Unit Price Ext. Price
3,553 $0.737 $2,618.561

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