570 W Power Field Effect Transistors (FET) 5

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
APT50M75LLLG	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	570 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	228 A	2500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	Pure Matte Tin (Sn)	.075 ohm	57 A	SINGLE	R-PSFM-T3	DRAIN		TO-264AA		NOT SPECIFIED	NOT SPECIFIED	85 pF	MIL-STD-750
MMIX1F180N25T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	570 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	500 A	3000 mJ	130 A	21	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.013 ohm	130 A	DUAL	R-PDSO-G21	ISOLATED	AVALANCHE RATED
IXFR80N50Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	570 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	5000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.072 ohm	50 A	SINGLE	R-PSIP-T3	ISOLATED	AVALANCHE RATED, UL RECOGNIZED		e1	10	260	115 pF
MMIX1F160N30T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	570 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	440 A	3000 mJ	102 A	21	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.02 ohm	102 A	DUAL	R-PDSO-G21	ISOLATED	AVALANCHE RATED
IXFR32N100Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	570 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	2000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.35 ohm	23 A	SINGLE	R-PSIP-T3	ISOLATED	AVALANCHE RATED		e1	10	260	67 pF	UL RECOGNIZED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.