Microchip Technology - APT50M75LLLG

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APT50M75LLLG by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number APT50M75LLLG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 570 W; Maximum Drain-Source On Resistance: .075 ohm; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet APT50M75LLLG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 57 A
Maximum Pulsed Drain Current (IDM): 228 A
Surface Mount: NO
Terminal Finish: Pure Matte Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 570 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .075 ohm
Avalanche Energy Rating (EAS): 2500 mJ
Maximum Feedback Capacitance (Crss): 85 pF
JEDEC-95 Code: TO-264AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 500 V
Reference Standard: MIL-STD-750
Peak Reflow Temperature (C): NOT SPECIFIED
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