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| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | APT50M75LLLG |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 570 W; Maximum Drain-Source On Resistance: .075 ohm; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; |
| Datasheet | APT50M75LLLG Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 57 A |
| Maximum Pulsed Drain Current (IDM): | 228 A |
| Surface Mount: | NO |
| Terminal Finish: | Pure Matte Tin (Sn) |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 570 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .075 ohm |
| Avalanche Energy Rating (EAS): | 2500 mJ |
| Maximum Feedback Capacitance (Crss): | 85 pF |
| JEDEC-95 Code: | TO-264AA |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 500 V |
| Reference Standard: | MIL-STD-750 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
