6.25 W Power Field Effect Transistors (FET) 16

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SI8429DB-T1-E1	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	8 V	UNSPECIFIED	SQUARE	ENHANCEMENT MODE	1	25 A		11.7 A	4	GRID ARRAY	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.098 ohm	7.8 A	BOTTOM	S-PBGA-X4	1		Not Qualified			e3	30	260
2N6660-2	Vishay Intertechnology	N-CHANNEL	SINGLE	NO	6.25 W						ENHANCEMENT MODE	1			.99 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					.99 A
PMXB360ENEAZ	NXP Semiconductors	N-CHANNEL	SINGLE	YES	6.25 W						ENHANCEMENT MODE	1			1.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.1 A
NTMFS4108NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	203 A	450 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.0022 ohm	13.5 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	40	260
NTMFS4108NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	203 A	450 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.0022 ohm	13.5 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	40	260
PHK5NQ15T,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	6.25 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			NICKEL PALLADIUM GOLD		5 A			2					e4	30	260
PHK18NQ03LT,518	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	50 mJ	20.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.0151 ohm	20.3 A	DUAL	R-PDSO-G8	2		Not Qualified	LOGIC LEVEL COMPATIBLE		e4	30	260
PHK28NQ03LT,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	6.25 W						ENHANCEMENT MODE	1			23.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					23.7 A			2						30	260
PHK13N03LT,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	6.25 W						ENHANCEMENT MODE	1			13.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			NICKEL PALLADIUM GOLD		13.8 A			2					e4	30	260
PMZ200UNE	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	5 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.25 ohm	1.4 A	BOTTOM	R-PBCC-N3		DRAIN							9 pF	IEC-60134
PHK18NQ03LT,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	6.25 W						ENHANCEMENT MODE	1			20.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			NICKEL PALLADIUM GOLD		20.3 A			2					e4	30	260
PHK18NQ03LT	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	50 mJ	20.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.0125 ohm	20.3 A	DUAL	R-PDSO-G8	2		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA	e4	30	260
BSG0813NDI	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	160 A	30 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	.004 ohm	50 A	DUAL	R-PDSO-N8	1	SOURCE				e3			38 pF
BSG0810NDI	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	160 A	30 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	.004 ohm	50 A	DUAL	R-PDSO-N8	1	SOURCE				e3			33 pF
SP001241674	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	160 A	30 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.004 ohm	50 A	DUAL	R-PDSO-N8		SOURCE							33 pF
PMZ200UNEYL	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	5 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	.25 ohm	1.4 A	BOTTOM	R-PBCC-N3	1	DRAIN				e3	30	260	9 pF	IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.