62.5 W Power Field Effect Transistors (FET) 103

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
AOD4185	Alpha & Omega Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	115 A		50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.015 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252		NOT SPECIFIED	NOT SPECIFIED
SIRA01DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	31.2 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	42 ns	-55 Cel	98 ns		.0049 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	70 pF
BSC900N20NS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	61 A	100 mJ	15.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.09 ohm	15.2 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3		260
DMT6007LFGQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	15 A	DUAL	S-PDSO-N8	1	DRAIN		HIGH RELIABILITY		e3	30	260	38.5 pF	AEC-Q101; MIL-STD-202
SIR184DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	20 mJ	73 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	5 W	150 Cel	SILICON	34 ns	-55 Cel	52 ns		.007 ohm	73 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	22 pF
NTP2955G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.196 ohm	2.4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
SI7852ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	UNSPECIFIED	SWITCHING	80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	60 A	45 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.017 ohm	12 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3
SIR878BDP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	11.2 mJ	42.5 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	38 ns	-55 Cel	54 ns		.0144 ohm	42.5 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	12 pF
SIR606BDP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	20 mJ	38.7 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	34 ns	-55 Cel	48 ns		.0205 ohm	38.7 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	11.2 pF
SI7852ADP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	UNSPECIFIED	SWITCHING	80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	60 A	45 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.017 ohm	12 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3
SIR876ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	80 A	31.2 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0108 ohm	40 A	DUAL	R-PDSO-C5	1	DRAIN
DMT6007LFGQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	15 A	DUAL	S-PDSO-N8	1	DRAIN		HIGH RELIABILITY		e3		260	38.5 pF	AEC-Q101; MIL-STD-202
PH7030L	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	220 A	115 mJ	68 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.011 ohm	68 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	40	260
PH7030L,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	220 A	115 mJ	68 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.011 ohm	68 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3
SIRA06DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	20 mJ	40 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	44 ns	-55 Cel	76 ns		.0025 ohm	40 A	DUAL	R-PDSO-F5		DRAIN					30	260	79 pF
PH955L,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	187 A	195 mJ	62.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0083 ohm	62.5 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL	MO-235	e3	30	260
PH7030LT/R	NXP Semiconductors	N-CHANNEL	SINGLE	YES	62.5 W						ENHANCEMENT MODE	1			68 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							68 A
PHM21NQ15T	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	60 A	250 mJ	22.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.055 ohm	22.2 A	DUAL	R-PDSO-N8		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SIR112DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	45 mJ	133 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	90 ns	-55 Cel	80 ns		.00196 ohm	133 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	90 pF
NTP2955	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.196 ohm	2.4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
NTP65N02RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0105 ohm	7.6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
NTD2406-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	162 mJ	24 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.042 ohm	24 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
NTMFS4835NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	208 A	392 mJ	104 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.005 ohm	12 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	30	260
NTMFS4709NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	140 A	450 mJ	94 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0055 ohm	11 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified			e3		260
FDPF17N60NT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	838 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.34 ohm	17 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NTD24N06-1G	Onsemi	N-CHANNEL	SINGLE	YES	62.5 W						ENHANCEMENT MODE	1			24 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		24 A			1					e3		260
NTB65N02RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0105 ohm	7.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD24N06T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	162 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.042 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
FDPF2710T	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	145 mJ	25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0425 ohm	25 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FDD5N50NZFTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	165 mJ	3.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.75 ohm	3.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
NTMFS4709NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	140 A	450 mJ	94 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0055 ohm	11 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified			e3		260
NTMFS034N15MC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	131 A	54 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.031 ohm	31 A	DUAL	R-PDSO-F8	1	DRAIN			MO-240AA	e3	30	260	5 pF
STD24N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	162 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.045 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NTD24N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	162 mJ	27 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.042 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD24N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	162 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.042 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD24N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	162 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.042 ohm	24 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
NTD24N06-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	162 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin/Lead (Sn/Pb)	.042 ohm	24 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
NTB65N02RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0105 ohm	7.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
STL20DN10F7	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	20 A		20 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.067 ohm	12.3 A	DUAL	R-PDSO-F6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
STL51N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE	YES	62.5 W							1			51 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							51 A									NOT SPECIFIED	NOT SPECIFIED
STL105NS3LLH7	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	420 A			5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0055 ohm	105 A	DUAL	R-PDSO-F5		DRAIN		BULK: 3000			NOT SPECIFIED	NOT SPECIFIED	42 pF
STL58N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	224 A	150 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0112 ohm	64 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
PH5330E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	250 A	130 mJ	80 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0085 ohm	80 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3
PH6030L	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	95 mJ	76.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0097 ohm	76.7 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified		MO-235	e3
PH8230E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	268 A	115 mJ	67 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.0132 ohm	67 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235AA	e3	30	260
PH2520U	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	250 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.0039 ohm	100 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
PH20100S	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	134 A	250 mJ	34.3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.023 ohm	34.3 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
PH3230S,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	428 A	2.5 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0065 ohm	107 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	MO-235AA	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.