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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STL58N3LLH5 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Maximum Operating Temperature: 175 Cel; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | STL58N3LLH5 Datasheet |
| In Stock | 407 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 64 A |
| Maximum Pulsed Drain Current (IDM): | 224 A |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 62.5 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0112 ohm |
| Avalanche Energy Rating (EAS): | 150 mJ |
| Other Names: |
-497-16041-2 -497-16041-1 497-16041-2-ND 497-16041-1-ND 497-16041-2 497-16041-1 497-STL58N3LLH5CT -497-16041-6 497-16041-6 497-STL58N3LLH5TR 497-16041-6-ND 497-STL58N3LLH5DKR |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 30 V |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









