Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
65 W |
ENHANCEMENT MODE |
1 |
60 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
60 A |
1 |
e6 |
|||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
65 W |
ENHANCEMENT MODE |
1 |
60 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
60 A |
|||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
79 mJ |
70 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0018 ohm |
35 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
ULTRA LOW RESISTANCE |
MO-240AA |
e3 |
30 |
260 |
|||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
65 W |
ENHANCEMENT MODE |
1 |
40 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
40 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
65 W |
ENHANCEMENT MODE |
1 |
48 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
48 A |
|||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
174 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
835 A |
153 mJ |
174 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
42 ns |
-55 Cel |
75 ns |
MATTE TIN |
.0013 ohm |
174 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
MO-240BA |
e3 |
30 |
260 |
250 pF |
|||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
72 mJ |
131 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0032 ohm |
27 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
316 A |
216 mJ |
68 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
48 ns |
-55 Cel |
47 ns |
Matte Tin (Sn) - annealed |
.0065 ohm |
68 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
MO-240BA |
e3 |
30 |
260 |
||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
YES |
65 W |
20 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
20 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
26 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.028 ohm |
26 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
FAST SWITCHING |
e0 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
65 W |
ENHANCEMENT MODE |
1 |
14 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Matte Tin (Sn) |
14 A |
e3 |
||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
65 W |
ENHANCEMENT MODE |
1 |
23 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN LEAD |
23 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
100 mJ |
22 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.065 ohm |
22 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
100 mJ |
22 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
60 W |
175 Cel |
SILICON |
175 ns |
Matte Tin (Sn) |
.065 ohm |
22 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
e3 |
200 pF |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
40 mJ |
16 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
60 W |
150 Cel |
SILICON |
190 ns |
MATTE TIN |
.12 ohm |
16 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW THRESHOLD |
e3 |
90 pF |
|||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
65 W |
ENHANCEMENT MODE |
1 |
23 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN LEAD |
23 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
80 mJ |
17 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
60 W |
175 Cel |
SILICON |
MATTE TIN |
.11 ohm |
17 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e3 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
700 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
150 mJ |
2.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
4.7 ohm |
2.5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
26 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.055 ohm |
26 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
FAST SWITCHING |
e0 |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
21 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.08 ohm |
21 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
FAST SWITCHING |
e0 |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
21 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.08 ohm |
21 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
FAST SWITCHING |
e0 |
||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
40 mJ |
40 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.024 ohm |
40 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.055 ohm |
16 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
260 |
||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
40 mJ |
40 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.024 ohm |
40 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
260 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
40 mJ |
40 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.024 ohm |
40 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
40 mJ |
40 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.024 ohm |
40 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
65 W |
ENHANCEMENT MODE |
1 |
40 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
40 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
65 W |
ENHANCEMENT MODE |
1 |
27 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
27 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
65 W |
ENHANCEMENT MODE |
1 |
40 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
40 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
65 W |
ENHANCEMENT MODE |
1 |
34 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
34 A |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17 A |
7 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
TIN |
.598 ohm |
4.7 A |
SINGLE |
R-PSSO-G7 |
1 |
DRAIN |
TO-263 |
e3 |
.94 pF |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
95 mJ |
45 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0157 ohm |
45 A |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
TO-262AA |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
95 mJ |
45 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0134 ohm |
45 A |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-262AA |
e3 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
95 mJ |
45 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0154 ohm |
45 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
245 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
230 mJ |
20 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0076 ohm |
20 A |
DUAL |
R-PDSO-F8 |
1 |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
260 A |
93 mJ |
65 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - with Nickel (Ni) barrier |
.0084 ohm |
65 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
260 A |
93 mJ |
65 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - with Nickel (Ni) barrier |
.0084 ohm |
65 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
TO-251AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
230 mJ |
20 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0072 ohm |
20 A |
DUAL |
R-PDSO-F8 |
1 |
LOGIC LEVEL COMPATIBLE |
e3 |
260 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
95 mJ |
45 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0131 ohm |
45 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-263AB |
e3 |
245 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
165 mJ |
20 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0112 ohm |
20 A |
DUAL |
R-PDSO-F8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
95 mJ |
45 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0134 ohm |
45 A |
SINGLE |
R-PSFM-T3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e3 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
130 mJ |
50 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.015 ohm |
50 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
ULTRA LOW RESISTANCE |
TO-252 |
e3 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
95 mJ |
45 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0157 ohm |
45 A |
SINGLE |
R-PSFM-T3 |
1 |
Not Qualified |
TO-220AB |
e3 |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
260 A |
93 mJ |
65 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0084 ohm |
65 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
260 A |
93 mJ |
65 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - with Nickel (Ni) barrier |
.0084 ohm |
65 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
344 A |
77 mJ |
86 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0052 ohm |
86 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
260 |
|||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
282 A |
58 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0067 ohm |
50 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY |
e3 |
30 |
260 |
132 pF |
IEC-60134 |
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|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
65 W |
PLASTIC/EPOXY |
SWITCHING |
700 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26.4 A |
97 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.6 ohm |
6.6 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
40 pF |
MIL-STD-202 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.