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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PSMN023-80LS,115 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; |
| Datasheet | PSMN023-80LS,115 Datasheet |
| In Stock | 1,018 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
568-5583-1 568-5583-2 954-PSMN023-80LS115 PSMN02380LS115 934064653115 568-5583-6 |
| Maximum Power Dissipation (Abs): | 65 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 34 A |
| Maximum Drain Current (Abs) (ID): | 34 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |








