65.8 W Power Field Effect Transistors (FET) 6

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
SIR165DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65.8 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	20 mJ	60 A	5	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	90 ns	-55 Cel	106 ns		.0046 ohm	60 A	DUAL	R-PDSO-F5		DRAIN		NOT SPECIFIED	NOT SPECIFIED	516 pF
SISS73DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65.8 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	20 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	32 ns	-55 Cel	48 ns	TIN	.125 ohm	16.2 A	DUAL	S-PDSO-N8	1	DRAIN	e3	40	260	7 pF
SISS65DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65.8 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	120 A	20 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	90 ns	-55 Cel	106 ns	PURE MATTE TIN	.0046 ohm	94 A	DUAL	S-PDSO-N8	1	DRAIN		30	260	516 pF
SIR167DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65.8 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	20 mJ	60 A	5	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	90 ns	-55 Cel	106 ns		.0055 ohm	60 A	DUAL	R-PDSO-F5		DRAIN		NOT SPECIFIED	NOT SPECIFIED	460 pF
SISS92DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65.8 W	PLASTIC/EPOXY	SWITCHING	250 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	20 A	5 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	32 ns	-55 Cel	44 ns		.173 ohm	12.3 A	DUAL	S-PDSO-N8		DRAIN		NOT SPECIFIED	NOT SPECIFIED	1.5 pF
SISS94DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65.8 W	PLASTIC/EPOXY	SWITCHING	200 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	25 A	5 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	34 ns	-55 Cel	54 ns		.075 ohm	19.5 A	DUAL	S-PDSO-N8		DRAIN		40	260	10 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.