SISS65DN-T1-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SISS65DN-T1-GE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65.8 W; Maximum Pulsed Drain Current (IDM): 120 A; Terminal Finish: PURE MATTE TIN;
Datasheet	SISS65DN-T1-GE3 Datasheet
In Stock	14,220

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	90 ns
Maximum Drain Current (ID):	94 A
Maximum Pulsed Drain Current (IDM):	120 A
Surface Mount:	YES
Terminal Finish:	PURE MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	65.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	106 ns
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0046 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	20 mJ
Maximum Feedback Capacitance (Crss):	516 pF
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
14,220	-	-

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