71 W Power Field Effect Transistors (FET) 86

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
G3R450MT17J	Genesic Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	1700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	59 mJ		7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel			.63 ohm	8 A	SINGLE	R-PSSO-G7		DRAIN			TO-263				1.5 pF	IEC-60747-8-4
IRFR3806TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	73 mJ	43 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0158 ohm	43 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
NTD6416ANLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	50 mJ	19 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.074 ohm	19 A	DUAL	R-PDSO-G2	1	DRAIN	Not Qualified			e3	30	260
SQJQ960EL-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	200 A	34 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	19 ns	-55 Cel	33 ns		.009 ohm	63 A	SINGLE	R-PSSO-G4		DRAIN							108 pF	AEC-Q101
IAUZ40N06S5N050ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	241 A	115 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.005 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3			26 pF	AEC-Q101
IRFS3806TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	73 mJ	43 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0158 ohm	43 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB
AUIRFS3806	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	73 mJ	43 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0158 ohm	43 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
NTD6416ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	62 A	43 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.081 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
AUIRFR3806TRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	73 mJ	43 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0158 ohm	43 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
NVD6416ANT4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	62 A	43 mJ	17 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.081 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	50 pF	AEC-Q101
SQD40N04-10A-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	168 A	45 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.014 ohm	42 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IRL3715LPBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	110 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.014 ohm	54 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-262AA	e3	30	260
IRL3715PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	110 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.014 ohm	54 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
IPB35N10S3L-26	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	175 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0322 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IPD35N10S3L-26	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	65 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.026 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, ULTRA LOW RESISTANCE	TO-252	e3		260
NVTYS013N10MCLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	83 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0136 ohm	11.9 A	DUAL	R-PDSO-X8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	7 pF	AEC-Q101
FDU6682	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	240 mJ	75 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	57 ns	-55 Cel	96 ns		.0062 ohm	21 A	SINGLE	R-PSIP-T3					TO-251AA
NTD6416AN-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	62 A	43 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.081 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3
SSVD5804NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	125 A	195 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0075 ohm	69 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	280 pF	AEC-Q101
NTDV5804NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	125 A	195 mJ	69 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0075 ohm	69 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
SVD5804NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	125 A	195 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0075 ohm	69 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	280 pF	AEC-Q101
STDV5804NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	125 A	195 mJ	69 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0075 ohm	69 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	280 pF	AEC-Q101
NTD5804NG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	125 A	195 mJ	69 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0085 ohm	69 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
NTD5804NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	125 A	195 mJ	69 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0085 ohm	69 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NVD5818NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	125 A	195 mJ	70 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0073 ohm	70 A	SINGLE	R-PSSO-G2		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
FDB3860	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	96 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.037 ohm	6.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
NVD6416ANLT4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	50 mJ	19 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.074 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
FDD6682	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	240 mJ	75 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	57 ns	-55 Cel	96 ns		.0062 ohm	21 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
NVD6416ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	62 A	43 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.081 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NVD6416ANLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	50 mJ	19 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.074 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NTD5865NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	137 A	36 mJ	43 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.018 ohm	38 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
PSMN3R5-30LL,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	71 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							40 A
IPU25CNE8NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	85 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	65 mJ	35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.025 ohm	35 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3
IPI180N10N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	172 A	50 mJ	43 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.018 ohm	43 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
IPSH6N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	350 A	150 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0062 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
IPI80N04S4L-04	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	100 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0043 ohm	80 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA			260
IPBH6N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	150 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0062 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
IPI26CNE8NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	85 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	65 mJ	35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.026 ohm	35 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3
IPI45N06S4L-08	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	97 mJ	45 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0079 ohm	45 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-262AA	e3
IPUH6N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	350 A	150 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0062 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
IPU25CN10NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	65 mJ	35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.025 ohm	35 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251AA	e3
IPDH6N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	150 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.006 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AA	e3		260
IPI45N06S4-09	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	97 mJ	45 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0094 ohm	45 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3
IPFH6N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	150 mJ	50 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0062 ohm	50 A	SINGLE	R-PSSO-G3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3
IPI26CN10NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	65 mJ	35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.026 ohm	35 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3
IPI80N04S4-04	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	100 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0046 ohm	80 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3		260
SP000683076	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	172 A	50 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.018 ohm	43 A	SINGLE	R-PSIP-T3					TO-262AA				11 pF	IEC-61249-2-21
SP000683090	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	71 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	172 A	50 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.018 ohm	43 A	SINGLE	R-PSFM-T3					TO-220AB				11 pF	IEC-61249-2-21

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.