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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQJQ960EL-T1_GE3 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Maximum Turn Off Time (toff): 33 ns; Avalanche Energy Rating (EAS): 34 mJ; |
| Datasheet | SQJQ960EL-T1_GE3 Datasheet |
| In Stock | 1,284 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Turn On Time (ton): | 19 ns |
| Maximum Drain Current (ID): | 63 A |
| Maximum Pulsed Drain Current (IDM): | 200 A |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 71 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 33 ns |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .009 ohm |
| Avalanche Energy Rating (EAS): | 34 mJ |
| Other Names: |
SQJQ960EL-T1_GE3TR SQJQ960EL-T1_GE3CT SQJQ960EL-T1_GE3DKR SQJQ960EL-T1_GE3-ND |
| Maximum Feedback Capacitance (Crss): | 108 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | AEC-Q101 |
