Vishay Intertechnology - SQJQ960EL-T1_GE3

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SQJQ960EL-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJQ960EL-T1_GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Maximum Turn Off Time (toff): 33 ns; Avalanche Energy Rating (EAS): 34 mJ;
Datasheet SQJQ960EL-T1_GE3 Datasheet
In Stock1,284
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 19 ns
Maximum Drain Current (ID): 63 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 71 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 33 ns
JESD-30 Code: R-PSSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .009 ohm
Avalanche Energy Rating (EAS): 34 mJ
Maximum Feedback Capacitance (Crss): 108 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
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