75 W Power Field Effect Transistors (FET) 935

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRF333

Samsung

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.5 A

e0

IRFZ30

Samsung

N-CHANNEL

SINGLE

NO

75 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

19 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

90 W

175 Cel

SILICON

131 ns

133 ns

.05 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IRF633

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

170 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

80 ns

90 ns

TIN LEAD

.6 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

IRFP432

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

280 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

40 ns

76 ns

2 ohm

4 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP230

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

170 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

80 ns

90 ns

.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

IRF332

Samsung

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.5 A

e0

IRFP430

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

280 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

40 ns

76 ns

1.5 ohm

4.5 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP433

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

280 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

40 ns

76 ns

2 ohm

4 A

SINGLE

R-PSFM-T3

Not Qualified

IRL531

Samsung

N-CHANNEL

SINGLE

NO

75 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

105 ns

85 ns

.2 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

IRFP431

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

280 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

40 ns

76 ns

1.5 ohm

4.5 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP9230

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

260 mJ

.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

150 ns

180 ns

.8 ohm

6.5 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP330

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

290 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

46 ns

80 ns

1 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP9130

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

550 mJ

12 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

200 ns

280 ns

.3 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

IRL630

Samsung

N-CHANNEL

SINGLE

NO

75 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

80 ns

90 ns

.6 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

IRFP331

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

350 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

290 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

46 ns

80 ns

1 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP9232

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

260 mJ

5.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

150 ns

180 ns

1.2 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP231

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

170 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

80 ns

90 ns

.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

IRF331

Samsung

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.5 A

e0

IRFP9233

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

260 mJ

5.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

150 ns

180 ns

1.2 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP232

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

170 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

80 ns

90 ns

.6 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

IRF9631

Samsung

P-CHANNEL

SINGLE

NO

75 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

260 mJ

4 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

150 ns

180 ns

.8 ohm

6.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IRFP9231

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

260 mJ

6.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

150 ns

180 ns

.8 ohm

6.5 A

SINGLE

R-PSFM-T3

Not Qualified

IRF9632

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

260 mJ

3 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

150 ns

180 ns

TIN LEAD

1.2 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.