75 W Power Field Effect Transistors (FET) 935

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
JANTX2N6760	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	400 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	22 A	1.7 mJ	5.5 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.22 ohm	5.5 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/542
IRHNJ63234	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	49.6 A	56 mJ	12.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	55 ns	-55 Cel	90 ns	TIN LEAD	.21 ohm	12.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 300K Rad(Si)
IRF5Y3315CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	150 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	94 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.085 ohm	18 A	SINGLE	S-MSFM-P3			Not Qualified		TO-257AA	e0
IRLU8726PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	340 A	120 mJ	86 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.058 ohm	86 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRHNJ597034	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	METAL	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	110 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.085 ohm	21 A	BOTTOM	R-MBCC-N3		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e0
IRF5Y5305CM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	55 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	72 A	160 mJ	18 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.065 ohm	18 A	SINGLE	R-MSFM-P3			Not Qualified	AVALANCHE RATED	TO-257AA	e0
IRHNJC9A7034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	840 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	60 ns	-55 Cel	75 ns		.018 ohm	40 A	BOTTOM	R-CBCC-N3		DRAIN							5 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHNJ9230	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	26 A	165 mJ	6.5 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	80 ns	-55 Cel	140 ns		.8 ohm	6.5 A	BOTTOM	R-CBCC-N3		DRAIN		ULTRA LOW RESISTANCE					40 pF	RH - 100K Rad(Si)
IRHNJ593Z30PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	152 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	125 ns	-55 Cel	120 ns		.07 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN					NOT SPECIFIED	NOT SPECIFIED		RH - 300K Rad(Si)
DMTH6005LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	400 A	171 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0041 ohm	100 A	DUAL	S-PDSO-N8		DRAIN				e3		260	69 pF	MIL-STD-202
DMTH6005LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	400 A	171 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0041 ohm	100 A	DUAL	S-PDSO-N8		DRAIN				e3		260	69 pF	MIL-STD-202
YTF233	Toshiba	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		8 A								e0
YTF232	Toshiba	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		8 A								e0
S3675	Toshiba	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		45 A								e0
YTF230	Toshiba	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		9 A								e0
YTF231	Toshiba	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		9 A								e0
2SK1600	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9 A		3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					5 ohm	3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
2SK2401	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	7.5 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.18 ohm	15 A	SINGLE	R-PSIP-T3		DRAIN
2SJ619	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	64 A	292 mJ	16 A	4	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.32 ohm	16 A	BOTTOM	R-PBCC-N4		DRAIN	Not Qualified			e0
2SK2401(SM)	Toshiba	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							15 A
2SK2661	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	180 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON					1.5 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK2401(TE24R)	Toshiba	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							15 A
2SK2883	Toshiba	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3 A
2SK2314	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A	193 mJ	27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON					.13 ohm	27 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK3085(Q)	Toshiba	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.5 A
2SK3085	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	227 mJ	3.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					2.2 ohm	3.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SJ505L-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A		50 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.036 ohm	50 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified			e6
NP45N06VDK-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	135 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.2 W	175 Cel	SILICON	60 ns		90 ns		.0196 ohm	45 A	SINGLE	R-PSSO-G2		DRAIN			TO-252				100 pF	AEC-Q101
2SJ328-Z-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.06 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SJ505L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A		50 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.036 ohm	50 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SJ328-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.06 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
H5N3005LDTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.255 ohm	15 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SJ328-Z-E1-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	75 W							1			20 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							20 A									NOT SPECIFIED	NOT SPECIFIED
2SJ328	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.06 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SJ302-Z	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A		16 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.1 ohm	16 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
H5N3005LMTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.255 ohm	15 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SJ280(L)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.06 ohm	30 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SJ543-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.095 ohm	20 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
H5N2501LD	Renesas Electronics	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
2SJ552S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.095 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
NP45N06PUK-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	75 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							45 A									NOT SPECIFIED	NOT SPECIFIED
H5N2501LM	Renesas Electronics	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
2SJ553S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.055 ohm	30 A	SINGLE	R-PSSO-G3		DRAIN	Not Qualified			e0
H5N2501LSTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A		18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.18 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NP45N06PUK-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	75 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							45 A									NOT SPECIFIED	NOT SPECIFIED
H5N2522LSTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.18 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SJ302-Z-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A		16 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.1 ohm	16 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
H5N2001LD-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.125 ohm	20 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e6

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.