75 W Power Field Effect Transistors (FET) 935

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BUZ103SLE3045	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	140 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.044 ohm	28 A	SINGLE	R-PSSO-G2			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-263AB	e3
JANTX2N6804	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	50 A	81 mJ	11 A	2	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.35 ohm	11 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/562
BUZ103SLE3045A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	140 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.044 ohm	28 A	SINGLE	R-PSSO-G2			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-263AB	e0
IRHNJC9A3034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	840 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	75 ns		.018 ohm	40 A	BOTTOM	R-CBCC-N3		DRAIN							5 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IRF5NJ5305	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	55 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	160 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.065 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	AVALANCHE RATED		e0
IRHNJ6S3234	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	49.6 A	56 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	90 ns		.21 ohm	12.4 A	BOTTOM	R-CBCC-N3		DRAIN							2.4 pF	MIL-STD-750; RH - 300K Rad(Si)
IRHNJC597034	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	110 mJ	21 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.085 ohm	21 A	BOTTOM	R-CBCC-N3		DRAIN		ULTRA-LOW RESISTANCE
IRHNJ53034A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	100 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns		.03 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN		RADIATION HARDENED						RH - 300K Rad(Si)
JANTXVR2N7545U3	Infineon Technologies	P-CHANNEL	SINGLE	YES	75 W			100 V				1			12.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.205 ohm	12.5 A					Qualified		TO-276AA	e0
IRHNJ63C30	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	600 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	13.6 A	76 mJ	3.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	2.9 ohm	3.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
BUZ12	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			37 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							37 A
IRHNJ593230SCS	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	32 A	75 mJ	8 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	155 ns		.505 ohm	8 A	BOTTOM	R-CBCC-N3		DRAIN								RH - 300K Rad(Si)
IRHNJ57230SESCS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	48 A	60 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns	TIN LEAD	.22 ohm	12 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0			11 pF
IRHNJ9A7130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	140 A	605 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	81 ns	-55 Cel	65 ns		.034 ohm	35 A	BOTTOM	R-CBCC-N3		DRAIN							3.3 pF	MIL-PRF-19500; MIL-STD-750; RH - 100K Rad(Si)
IPD70P04P4-09	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	292 A	24 mJ	73 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0089 ohm	73 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260
IRHN4230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	36 A	330 mJ	9 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.49 ohm	9 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ57133SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	130 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	80 A	65 mJ	20 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.08 ohm	20 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				MIL-19500/704
JANTXVR2N7486U3	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W	CERAMIC, METAL-SEALED COFIRED		200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	48 A	60 mJ	12 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.22 ohm	12 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0				MIL-19500/704
IRF8306MPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W							1			23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							23 A
IRF5Y540CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	225 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.058 ohm	18 A	SINGLE	S-MSFM-P3			Not Qualified	AVALANCHE ENERGY RATED	TO-257AA	e0
IRF330	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	400 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	22 A	1.7 mJ	5.5 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.22 ohm	5.5 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AA	e0
IRHNJ57230SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	48 A	60 mJ	12 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns	TIN LEAD	.22 ohm	12 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0			11 pF
IRF5NJ3315	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	80 A	78 mJ	20 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	85 ns	-55 Cel	135 ns	TIN LEAD	.08 ohm	20 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e0
IRF5NJZ48SCX	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN LEAD		22 A								e0
JANTXV2N6760	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	400 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	22 A	1.7 mJ	5.5 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.22 ohm	5.5 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/542
IRF5NJ6215	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	44 A	130 mJ	11 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.29 ohm	11 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRF8306MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W							1			23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							23 A			1
IPP80P04P4L-08	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	24 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0082 ohm	80 A	SINGLE	R-PSFM-T3					TO-220AB	e3			90 pF	AEC-Q101
IRLR8726TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A	120 mJ	86 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.058 ohm	86 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRL5NJ7413SCV	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	190 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	100 ns	-55 Cel	160 ns		.02 ohm	22 A	BOTTOM	R-XBCC-N3		DRAIN							80 pF
IRHNJ593230	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	32 A	75 mJ	8 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	155 ns	TIN LEAD	.505 ohm	8 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 300K Rad(Si)
BUZ103S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	124 A	140 mJ	31 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin/Lead (Sn/Pb)	.036 ohm	31 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
IRHNJ9A3130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	140 A	605 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	81 ns	-55 Cel	65 ns		.034 ohm	35 A	BOTTOM	R-CBCC-N3		DRAIN							3.3 pF	MIL-PRF-19500; MIL-STD-750; RH - 300K Rad(Si)
IRHNJ6S7230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	64 A	60 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	50 ns	-55 Cel	51 ns		.13 ohm	16 A	BOTTOM	R-CBCC-N3		DRAIN							3.8 pF	MIL-STD-750; RH - 100K Rad(Si)
JANTXV2N6806	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	28 A	66 mJ	6.5 A	2	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.92 ohm	6.5 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/562
IRL5Y7413CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	30 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	230 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.03 ohm	18 A	SINGLE	S-MSFM-P3			Not Qualified		TO-257AA	e0
BSZ024N04LS6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	520 A	137 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0034 ohm	130 A	DUAL	S-PDSO-N8	1	DRAIN				e3			19 pF
JANTX2N6760	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	400 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	22 A	1.7 mJ	5.5 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.22 ohm	5.5 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/542
IRHNJ63234	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	49.6 A	56 mJ	12.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	90 ns	TIN LEAD	.21 ohm	12.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 300K Rad(Si)
IRF5Y3315CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	150 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	94 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.085 ohm	18 A	SINGLE	S-MSFM-P3			Not Qualified		TO-257AA	e0
IRLU8726PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	340 A	120 mJ	86 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.058 ohm	86 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRHNJ597034	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	METAL	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	110 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.085 ohm	21 A	BOTTOM	R-MBCC-N3		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e0
IRF5Y5305CM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	55 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	72 A	160 mJ	18 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.065 ohm	18 A	SINGLE	R-MSFM-P3			Not Qualified	AVALANCHE RATED	TO-257AA	e0
IRHNJC9A7034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	840 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	75 ns		.018 ohm	40 A	BOTTOM	R-CBCC-N3		DRAIN							5 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHNJ9230	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	26 A	165 mJ	6.5 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	80 ns	-55 Cel	140 ns		.8 ohm	6.5 A	BOTTOM	R-CBCC-N3		DRAIN		ULTRA LOW RESISTANCE					40 pF	RH - 100K Rad(Si)
IRHNJ593Z30PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	152 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	120 ns		.07 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN					NOT SPECIFIED	NOT SPECIFIED		RH - 300K Rad(Si)
BUZ10S2	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			24 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							24 A
IRHNJ63434	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W							1			3.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							3.4 A									NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.