75 W Power Field Effect Transistors (FET) 935

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRHN3230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	36 A	330 mJ	9 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.49 ohm	9 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJC9A7130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	140 A	605 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	81 ns	-55 Cel	65 ns		.034 ohm	35 A	BOTTOM	R-CBCC-N3		DRAIN							3.3 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRF5NJ5305SCX	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	55 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	160 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	151 ns	-55 Cel	130 ns	TIN LEAD	.065 ohm	22 A	BOTTOM	R-XBCC-N3		DRAIN				e0
IRHNJ593Z30SCS	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	152 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	120 ns		.07 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN								MIL-19500
IRHNJ57034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	100 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.03 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHN250	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			18.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		18.5 A								e0
IRF6728MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	230 mJ	23 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0025 ohm	23 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified
IRHNJ7130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	58 A	150 mJ	14.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	110 ns	-55 Cel	100 ns	TIN LEAD	.2 ohm	14.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 100K Rad(Si)
IRLU7821CPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	230 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.01 ohm	30 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRF635	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A		6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.68 ohm	6.8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
IRF130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	56 A	75 mJ	14 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.21 ohm	14 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AA	e0
IRHNJ7430SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	500 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	17.6 A	150 mJ	4.5 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.77 ohm	4.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0
JANTXV2N6762	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	500 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	18 A	1.1 mJ	4.5 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.8 ohm	4.5 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/542
IRHNJ67134	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	60 mJ	19 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.088 ohm	19 A	BOTTOM	R-CBCC-N3			Not Qualified			e0
JANTX2N6806	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	28 A	66 mJ	6.5 A	2	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.92 ohm	6.5 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/562
IRHNJ6S3130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	73 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	90 ns		.042 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN							6 pF	MIL-STD-750; RH - 300K Rad(Si)
IRLR8726PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A	120 mJ	86 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.058 ohm	86 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
JANTXV2N6756	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	56 A	75 mJ		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.21 ohm	14 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/542
IRLR7821TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	230 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.01 ohm	65 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRHNJ93230	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	26 A	165 mJ	6.5 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	80 ns	-55 Cel	140 ns		.8 ohm	6.5 A	BOTTOM	R-CBCC-N3		DRAIN		ULTRA LOW RESISTANCE					40 pF	RH - 300K Rad(Si)
BUZ11AL	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							26 A
IRHNJ54130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	70 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.06 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRF9530NSPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	250 mJ	14 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.2 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
IPB60R170CFD7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	51 A	60 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.17 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-263AB	e3
IRHNJ53034PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	100 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns		.03 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN		RADIATION HARDENED			NOT SPECIFIED	NOT SPECIFIED		RH - 300K Rad(Si)
IRHNJ68130	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							22 A
IRF6795MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	250 A	190 mJ	160 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN SILVER COPPER	.0018 ohm	32 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
IRL5NJ7413	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	190 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.02 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	AVALANCHE RATED		e0
JANTXVR2N7489T3	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W	UNSPECIFIED		200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	48 A	60 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		12 A	SINGLE	S-XSFM-P3		DRAIN	Qualified	RADIATION HARDENED	TO-257AA	e0				MIL-19500/705
IRHNJ594130	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	50 A	96 mJ	12.5 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.205 ohm	12.5 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRF5NJ9540SCX	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	72 A	260 mJ	18 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	164 ns	-55 Cel	171 ns	TIN LEAD	.117 ohm	18 A	BOTTOM	R-XBCC-N3		DRAIN				e0				MIL-19500
IRHNJ6S3230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	64 A	60 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	50 ns	-55 Cel	51 ns		.13 ohm	16 A	BOTTOM	R-CBCC-N3		DRAIN							3.8 pF	MIL-STD-750; RH - 300K Rad(Si)
IRHNJ58Z30	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	155 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.02 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRF5NJZ48	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	55 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	160 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.016 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	AVALANCHE RATED		e0
IPB80P04P4L-08	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	24 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0079 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3			90 pF	AEC-Q101
IRHNJ53034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	100 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns	TIN LEAD	.03 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED		e0				RH - 300K Rad(Si)
IRF6728MPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	230 mJ	23 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0025 ohm	23 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e3
JANTXV2N6804	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	50 A	81 mJ	11 A	2	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.35 ohm	11 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/562
IRHN9130	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	44 A	190 mJ	11 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.325 ohm	11 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0
IRHNJ597130	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	50 A	96 mJ	12.5 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.205 ohm	12.5 A	BOTTOM	R-PBCC-N3		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e0
IRF5YZ48CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	55 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	160 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.029 ohm	18 A	SINGLE	S-MSFM-P3			Not Qualified	AVALANCHE ENERGY RATED	TO-257AA	e0
IRHNJ593Z30A	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	152 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	120 ns		.07 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN								RH - 300K Rad(Si)
IRHNJ593Z30	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	152 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	120 ns	TIN LEAD	.07 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 300K Rad(Si)
IRHNJ7230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	37 A	150 mJ	9.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.4 ohm	9.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ6S7234	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	49.6 A	56 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	90 ns		.21 ohm	12.4 A	BOTTOM	R-CBCC-N3		DRAIN							2.4 pF	MIL-STD-750; RH - 100K Rad(Si)
IRHNJ53130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	70 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.06 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ9130	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	44 A	150 mJ	11 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.34 ohm	11 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRF5NJ9540PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	72 A	260 mJ	18 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	164 ns	-55 Cel	171 ns		.117 ohm	18 A	BOTTOM	R-XBCC-N3		DRAIN					NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.