75 W Power Field Effect Transistors (FET) 935

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRHYB68230CM	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			16 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							16 A
IRHYS67234CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	250 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	48 A	80 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	46 ns	-55 Cel	56 ns	TIN LEAD	.22 ohm	12 A	SINGLE	R-XSFM-P3	ISOLATED	Not Qualified		TO-257AA	e0			2.2 pF	MIL-19500; RH - 100K Rad(Si)
JANSH2N7546U3	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED		200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	32 A	75 mJ	8 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.505 ohm	8 A	BOTTOM	R-XBCC-N3	DRAIN	Qualified		TO-276AA					MIL-19500; RH - 1000K Rad(Si)
JANSF2N7520T3	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	80 A	134 mJ	20 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	90 ns	-55 Cel	125 ns		.087 ohm	20 A	SINGLE	R-XSFM-P3	ISOLATED	Qualified	HIGH RELIABILITY	TO-257AA		NOT SPECIFIED	NOT SPECIFIED	62 pF	MIL-19500; RH - 300K Rad(Si)
IRFN140	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	112 A	250 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.125 ohm	28 A	BOTTOM	R-CBCC-N3	ISOLATED	Not Qualified	HIGH RELIABILITY		e0
BUY06CS35J-01	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED		60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	100 A	200 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	38 ns	-55 Cel	40 ns		.035 ohm	35 A	BOTTOM	R-XBCC-N3	DRAIN							105 pF	ESA/SCC 5205/032; RH - 100K Rad(Si)
IRHM8230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	36 A	330 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.49 ohm	9 A	SINGLE	S-MSFM-P3	ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
BUZ308	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	320 mJ	2.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	4 ohm	2.6 A	SINGLE	R-PSFM-T3		Not Qualified	AVALANCHE RATED	TO-218	e0
IRHY9230CM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	26 A	165 mJ	6.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.8 ohm	6.5 A	SINGLE	S-CSFM-P3	ISOLATED	Not Qualified	RADIATION HARDENED	TO-257AA	e0
IRHY53034CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	72 A	110 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.04 ohm	18 A	SINGLE	R-CSFM-P3	ISOLATED	Not Qualified	ULTRA-LOW RESISTANCE	TO-257AA	e0
IRHYB64130CM	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							20 A
IRHY9130CM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	100 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	44 A	150 mJ	11 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.35 ohm	11 A	SINGLE	R-MSFM-P3	ISOLATED	Not Qualified	RADIATION HARDENED	TO-257AA	e0
JANHCA2N6806	Infineon Technologies	P-CHANNEL	SINGLE	YES	75 W	UNSPECIFIED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	28 A		6.5 A	3	UNCASED CHIP	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		6.5 A	UPPER	R-XUUC-N3	DRAIN	Qualified			e0				MIL-19500/562D
IRHYB597Z30CM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	30 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	80 A	200 mJ	20 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	120 ns	TIN LEAD	.072 ohm	20 A	SINGLE	R-XSIP-P3	ISOLATED	Not Qualified		TO-257AA	e0			114 pF	RH - 100K Rad(Si)
JANSF2N7589U3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	60 mJ	19 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.088 ohm	19 A	BOTTOM	R-CBCC-N3	DRAIN	Qualified							MIL-19500; RH - 300K Rad(Si)
IRHY57230CMSE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	48 A	60 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.23 ohm	12 A	SINGLE	S-CSFM-P3		Not Qualified		TO-257AA	e0
JANKCAF2N7383	Infineon Technologies	P-CHANNEL	SINGLE	NO	75 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	26 A	171 mJ	6.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		6.5 A	SINGLE	R-XSFM-P3	ISOLATED	Qualified	RADIATION HARDENED	TO-257AA	e0				MIL-19500/615C
BUZ77B	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11.5 A	180 mJ	2.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	3.5 ohm	2.9 A	SINGLE	R-PSFM-T3		Not Qualified	AVALANCHE RATED	TO-220AB	e0
IRHYB597Z30CMPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	30 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	80 A	200 mJ	20 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	120 ns		.072 ohm	20 A	SINGLE	R-XSIP-P3	ISOLATED			TO-257AA		NOT SPECIFIED	NOT SPECIFIED	114 pF	RH - 100K Rad(Si)
BUZ50A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY		1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	5 ohm	2.5 A	SINGLE	R-PSFM-T3		Not Qualified		TO-220AB	e0
IRHY53230CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	50 A	60 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.21 ohm	12.5 A	SINGLE	S-CSFM-P3		Not Qualified		TO-257AA	e0
IRFN9240	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	44 A	500 mJ	8 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.52 ohm	11 A	BOTTOM	R-CBCC-N3	ISOLATED	Not Qualified	HIGH RELIABILITY		e0				MIL-19500/595
IRHY57234CMSES	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	250 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	38.4 A	59 mJ	9.6 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns		.41 ohm	9.6 A	SINGLE	R-XSFM-P3			RADIATION HARDENED	TO-257AA					RH - 100K Rad(Si)
IRHYS67130CMSCV	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	80 A	107 mJ	20 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	70 ns	-55 Cel	50 ns		.042 ohm	20 A	SINGLE	R-XSFM-P3			RADIATION HARDENED	TO-257AA					MIL-19500
JANSR2N7465U3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	400 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A	150 mJ	5 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	100 ns	-55 Cel	116 ns	TIN LEAD	1.39 ohm	5 A	BOTTOM	R-CBCC-N3	DRAIN	Qualified	RADIATION HARDENED		e0			60 pF	MIL-19500/676
IRHY58034CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	72 A	110 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.04 ohm	18 A	SINGLE	R-CSFM-P3	ISOLATED	Not Qualified	ULTRA-LOW RESISTANCE	TO-257AA	e0
JANSR2N7479U3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	155 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.02 ohm	22 A	BOTTOM	R-CBCC-N3	DRAIN	Qualified			e0				MIL-19500/703
IRHYS9A7130CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	120 A	605 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	75 ns		.035 ohm	30 A	SINGLE	R-XSFM-P3	ISOLATED			TO-257AA				3.3 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRFN9140	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	72 A	500 mJ	14 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.22 ohm	18 A	BOTTOM	R-CBCC-N3	DRAIN	Not Qualified	HIGH RELIABILITY		e0				MIL-19500/595
IRHM9230	Infineon Technologies	P-CHANNEL	SINGLE	NO	75 W	METAL	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1			6.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.8 ohm	6.5 A	SINGLE	S-MSFM-P3		Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRHY58230CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	50 A	60 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.21 ohm	12.5 A	SINGLE	S-CSFM-P3		Not Qualified		TO-257AA	e0
JANSR2N7520U3	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	METAL	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	110 mJ	21 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.085 ohm	21 A	BOTTOM	R-MBCC-N3	DRAIN	Qualified	ULTRA-LOW RESISTANCE			NOT SPECIFIED	NOT SPECIFIED		MIL-19500
IRHY57130CM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	87 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.07 ohm	18 A	SINGLE	S-XSFM-P3	ISOLATED	Not Qualified		TO-257AA	e0
IRF034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	60 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	100 A	19 mJ	25 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.058 ohm	25 A	BOTTOM	O-MBFM-P2	DRAIN	Not Qualified		TO-204AE	e0
JANHCA2N6760	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W	UNSPECIFIED	SWITCHING	400 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	22 A		5.5 A	3	UNCASED CHIP	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		5.5 A	UPPER	R-XUUC-N3	DRAIN	Qualified			e0				MIL-19500/542G
BUY25CS12K-01(ES)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED		250 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	50 A	60 mJ	12.4 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	50 ns	-55 Cel	55 ns		.13 ohm	12.4 A	SINGLE	R-XSFM-P3				TO-257AA				6 pF	RH - 100K Rad(Si)
JANSR2N7648U3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	140 A	605 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	81 ns	-55 Cel	65 ns		.034 ohm	35 A	BOTTOM	R-CBCC-N3	DRAIN							3.3 pF	MIL-PRF-19500; MIL-STD-750; RH - 100K Rad(Si)
JANSR2N7647U3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	840 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	75 ns		.018 ohm	40 A	BOTTOM	R-CBCC-N3	DRAIN							5 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHYB68130CM	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							20 A
2N7607T3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	80 A	98 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	136 ns	-55 Cel	88 ns	TIN LEAD	.045 ohm	20 A	SINGLE	R-XSFM-P3		Not Qualified	HIGH RELIABILITY	TO-257AA	e0
IRH8130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	56 A	160 mJ	14 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.2 ohm	14 A	BOTTOM	O-MBFM-P2	DRAIN	Not Qualified	RADIATION HARDENED	TO-204AA	e0
IRHY57234CMSE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	250 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	38.4 A	59 mJ	9.6 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns	TIN LEAD	.41 ohm	9.6 A	SINGLE	R-XSFM-P3		Not Qualified	RADIATION HARDENED	TO-257AA	e0				RH - 100K Rad(Si)
JANSR2N7589U3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	60 mJ	19 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.088 ohm	19 A	BOTTOM	R-CBCC-N3	DRAIN	Qualified							MIL-19500; RH - 100K Rad(Si)
BUZ21L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	100 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.085 ohm	21 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0
2N7625T3	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	80 A	181 mJ	20 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.074 ohm	20 A	SINGLE	R-CSFM-P3		Not Qualified		TO-257AA	e0
JANSR2N7648D5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	120 A	605 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	75 ns		.035 ohm	30 A	SINGLE	R-XSFM-P3	ISOLATED	Qualified		TO-257AA				3.3 pF	MIL-19500; RH - 100K Rad(Si)
IRHM8130U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	56 A	160 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.2 ohm	14 A	SINGLE	S-CSFM-P3	ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
JANSH2N7482T3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	177 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.03 ohm	18 A	SINGLE	S-CSFM-P3		Qualified		TO-257AA	e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.