75 W Power Field Effect Transistors (FET) 935

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRHY53Z30CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

30 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

177 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

18 A

SINGLE

S-CSFM-P3

Not Qualified

ULTRA-LOW RESISTANCE

TO-257AA

e0

IRHYS67130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

107 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

50 ns

TIN LEAD

.042 ohm

20 A

SINGLE

R-XSFM-P3

Not Qualified

RADIATION HARDENED

TO-257AA

e0

MIL-19500; RH - 100K Rad(Si)

BUY25CS12K-11

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

12.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

50 ns

-55 Cel

55 ns

.13 ohm

12.4 A

SINGLE

R-XSFM-P3

TO-257AA

6 pF

RH - 100K Rad(Si)

BUZ216

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

4.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.4 A

e0

IRHY597230CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

32 A

80 mJ

8 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.515 ohm

8 A

SINGLE

R-MSFM-P3

Not Qualified

TO-257AA

e0

IRHYS9A7034CMSCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

784 mJ

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.019 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

HIGH RELIABILITY

TO-257AA

RH - 100K Rad(Si)

IRHY593130CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

94 mJ

12.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

130 ns

TIN LEAD

.215 ohm

12.5 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

RH - 300K Rad(Si)

JANSF2N7547T3

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

94 mJ

12.5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

130 ns

.215 ohm

12.5 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

MIL-19500; RH - 300K Rad(Si)

IRHLYS797034CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

181 mJ

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

297 ns

-55 Cel

185 ns

TIN LEAD

.074 ohm

20 A

SINGLE

R-XSFM-P3

Not Qualified

RADIATION HARDENED

TO-257AA

e0

MIL-19500; RH - 100K Rad(Si)

IRHY3230CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

37.6 A

150 mJ

9.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9.4 A

SINGLE

R-CSFM-P3

Not Qualified

TO-257AA

e0

IRHM7230D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

36 A

330 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

IRHY67434CM

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

3.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.4 A

IRHM93130

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

44 A

190 mJ

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.325 ohm

11 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

JANSF2N7648D5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

605 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.035 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

3.3 pF

MIL-19500; RH - 300K Rad(Si)

IRHYS67230CMSCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 ns

-55 Cel

50 ns

.13 ohm

16 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

2.6 pF

MIL-19500; RH - 100K Rad(Si)

IRHY593130CMPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

94 mJ

12.5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

130 ns

.215 ohm

12.5 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

RH - 300K Rad(Si)

JANSF2N7382

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

44 A

150 mJ

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

11 A

SINGLE

R-MSFM-P3

Qualified

RADIATION HARDENED, HIGH RELIABILITY

TO-257AA

e0

MIL-19500/615

IRHM8230D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

36 A

330 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

BUZ307

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

320 mJ

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

3 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-218

e0

IRHYB63230CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

16 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

16 A

SINGLE

R-XSIP-P3

ISOLATED

Not Qualified

TO-257AA

e0

BUY25CS12K11ESX1SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

12.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

50 ns

-55 Cel

55 ns

.13 ohm

12.4 A

SINGLE

R-XSFM-P3

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

6 pF

RH - 100K Rad(Si)

IRHY58130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

87 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

18 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

IRH4130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

56 A

160 mJ

14 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

e0

IRC254

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

2.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.3 A

e0

IRHYS9A3034CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

784 mJ

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.019 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

5 pF

MIL-STD-750; RH - 300K Rad(Si)

JANHCA2N6762

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

UNSPECIFIED

SWITCHING

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

18 A

4.5 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4.5 A

UPPER

R-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/542G

JANSF2N7591U3C

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

BUY10CS12J-01

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

100 Cel

SILICON

60 ns

-55 Cel

55 ns

.13 ohm

12.4 A

BOTTOM

R-PBCC-N3

DRAIN

6 pF

ESA/SCC 5205/028; RH - 100K Rad(Si)

IRHY593034CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

72 A

120 mJ

18 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

18 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

IRFN340

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

UNSPECIFIED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

40 A

650 mJ

7.5 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.7 ohm

10 A

BOTTOM

R-XBCC-N3

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

BUZ309

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

2.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.8 A

e0

IMW120R220M1H

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

13 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

TIN

.372 ohm

13 A

SINGLE

R-PSFM-T3

TO-247

e3

10

260

2 pF

JANSR2N7594T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

48 A

80 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

46 ns

-55 Cel

56 ns

.22 ohm

12 A

SINGLE

R-XSFM-P3

ISOLATED

Qualified

TO-257AA

2.2 pF

MIL-19500; RH - 100K Rad(Si)

BUZ32SMD

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

38 A

120 mJ

9.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

9.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

e3

IRHY54230CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

50 A

60 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.21 ohm

12.5 A

SINGLE

S-CSFM-P3

Not Qualified

TO-257AA

e0

BUY10CS12J01PZZZA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

100 Cel

SILICON

60 ns

-55 Cel

55 ns

.13 ohm

12.4 A

BOTTOM

R-PBCC-N3

DRAIN

6 pF

ESA/SCC 5205/028; RH - 100K Rad(Si)

IRHYB593034CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

134 mJ

20 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.087 ohm

20 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e0

IRHYS63230CMSCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 ns

-55 Cel

50 ns

.13 ohm

16 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

2.6 pF

MIL-19500; RH - 300K Rad(Si)

IRHLYS797034CMSA

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

181 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

297 ns

-55 Cel

185 ns

.074 ohm

20 A

SINGLE

R-XSFM-P3

RADIATION HARDENED

TO-257AA

MIL-19500; RH - 100K Rad(Si)

JANSG2N7380U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

57.6 A

150 mJ

14.4 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

110 ns

-55 Cel

100 ns

.2 ohm

14.4 A

BOTTOM

R-CBCC-N3

DRAIN

MIL-19500; RH - 500K Rad(Si)

IMZA65R107M1H

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

76 mJ

20 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-55 Cel

.142 ohm

20 A

SINGLE

R-PSFM-T4

DRAIN

HIGH RELIABILITY

TO-247

NOT SPECIFIED

NOT SPECIFIED

7 pF

IPP70P04P4L-08

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

24 mJ

80 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0082 ohm

80 A

SINGLE

R-PSFM-T3

LOGIC LEVEL COMPATIBLE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPI70P04P4-09

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

288 A

24 mJ

72 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0094 ohm

72 A

SINGLE

R-PSIP-T3

TO-262AA

e3

ISC028N04NM5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

484 A

64 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0034 ohm

110 A

DUAL

R-PDSO-F8

1

DRAIN

e3

130 pF

IEC-61249-2-21; IEC-68-1

IRF044

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

60 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

176 A

340 mJ

44 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.032 ohm

44 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AE

e0

BUY25CS12K-11(P)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

12.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

50 ns

-55 Cel

55 ns

.13 ohm

12.4 A

SINGLE

R-XSFM-P3

TO-257AA

6 pF

RH - 100K Rad(Si)

IRHF58Z30CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

30 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

177 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

18 A

SINGLE

S-CSFM-P3

Not Qualified

ULTRA-LOW RESISTANCE

TO-257AA

e0

BUZ21SMD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

84 A

100 mJ

21 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.085 ohm

21 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.