75 W Power Field Effect Transistors (FET) 935

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF5NJ9540SCV	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	72 A	260 mJ	18 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	164 ns	-55 Cel	171 ns		.117 ohm	18 A	BOTTOM	R-XBCC-N3		DRAIN								MIL-19500
IRHNJ67C30	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	600 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	13.6 A	76 mJ	3.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	2.9 ohm	3.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ593034SCV	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	110 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	90 ns	-55 Cel	125 ns		.085 ohm	21 A	BOTTOM	R-CBCC-N3		DRAIN							60 pF	RH - 300K Rad(Si)
IRHNJ4130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	58 A	150 mJ	14.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.2 ohm	14.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ4230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	37 A	150 mJ	9.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.4 ohm	9.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ3230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	37 A	150 mJ	9.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.4 ohm	9.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ57130PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	70 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns		.06 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN					NOT SPECIFIED	NOT SPECIFIED	50 pF
JANTXVR2N7488T3	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W	UNSPECIFIED		130 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	72 A	80 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		18 A	SINGLE	S-XSFM-P3		DRAIN	Qualified	RADIATION HARDENED	TO-257AA	e0				MIL-19500/705
IRHNJC9A3130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	140 A	605 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	81 ns	-55 Cel	65 ns		.034 ohm	35 A	BOTTOM	R-CBCC-N3		DRAIN							3.3 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
BUZ103SE3045	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	124 A	140 mJ	31 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.036 ohm	31 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED	TO-263AB	e3
IRHNJ93130	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	44 A	150 mJ	11 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.34 ohm	11 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRFI7536GPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W							1			86 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							86 A									NOT SPECIFIED	NOT SPECIFIED
IRHNJ67234	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	49.6 A	56 mJ	12.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	90 ns	TIN LEAD	.21 ohm	12.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 100K Rad(Si)
IRHNJ57230	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		13 A								e0
IRL5NJ7413SCX	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	190 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	100 ns	-55 Cel	160 ns		.02 ohm	22 A	BOTTOM	R-XBCC-N3		DRAIN							80 pF
JANTXVH2N7484T3	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							18 A
JANTXVH2N7481U3	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							22 A
IRHNJ54Z30	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	155 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.02 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRF5NJ9540	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	72 A	260 mJ	18 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	164 ns	-55 Cel	171 ns	TIN LEAD	.117 ohm	18 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e0
IRHNJ9A7034SCS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	840 mJ	40 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	75 ns		.018 ohm	40 A	BOTTOM	R-CBCC-N3		DRAIN		HIGH RELIABILITY						RH - 100K Rad(Si)
IRHNJ5130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	57.6 A	150 mJ	14.4 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	110 ns	-55 Cel	100 ns		.2 ohm	14.4 A	BOTTOM	R-CBCC-N3		DRAIN								RH - 500K Rad(Si)
IRHNJC593034	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	110 mJ	21 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.085 ohm	21 A	BOTTOM	R-CBCC-N3		DRAIN		ULTRA-LOW RESISTANCE
IRHNJ54034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	100 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.03 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ57130B	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	70 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns		.06 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN							50 pF
IRHNJ3130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	58 A	150 mJ	14.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	110 ns	-55 Cel	100 ns	TIN LEAD	.2 ohm	14.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 300K Rad(Si)
JANTXVR2N7465U3	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W	CERAMIC, METAL-SEALED COFIRED		400 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	21.2 A	150 mJ	5 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		5 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED	TO-276AA	e0				MIL-19500/676B
IRHNJ58034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	100 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.03 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRF5Y6215CM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	150 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	44 A	135 mJ	11 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.29 ohm	11 A	SINGLE	S-MSFM-P3			Not Qualified		TO-257AA	e0
IRHN150	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		25 A								e0
IRLR7821PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	230 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.01 ohm	65 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
JANTXVR2N7482T3	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W	UNSPECIFIED		30 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	72 A	117 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		18 A	SINGLE	R-XSFM-P3		ISOLATED	Qualified	RADIATION HARDENED	TO-257AA	e0				MIL-19500/702
IRHNJ593034	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	METAL	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A	110 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.085 ohm	21 A	BOTTOM	R-MBCC-N3		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e0
IRLU7821PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	230 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.01 ohm	65 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRHNJ9A7034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	840 mJ	40 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	75 ns		.018 ohm	40 A	BOTTOM	R-CBCC-N3		DRAIN		HIGH RELIABILITY						RH - 100K Rad(Si)
IPD70P04P4L-08	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	24 mJ	70 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0078 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN		LOGIC LEVEL COMPATIBLE	TO-252	e3
IRHNJ7330SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	400 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A	150 mJ	5.3 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.39 ohm	5 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ9A3034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	840 mJ	40 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	75 ns		.018 ohm	40 A	BOTTOM	R-CBCC-N3		DRAIN		HIGH RELIABILITY						RH - 300K Rad(Si)
IRHNJ53Z30	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	155 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.02 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ6S3130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	73 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	90 ns		.042 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN							6 pF	MIL-STD-750; RH - 300K Rad(Si)
IRLR8726PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A	120 mJ	86 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.058 ohm	86 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
JANTXV2N6756	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	56 A	75 mJ		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.21 ohm	14 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/542
IRLR7821TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	230 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.01 ohm	65 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRHNJ57034	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	100 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.03 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHN250	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			18.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		18.5 A								e0
IRF6728MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	230 mJ	23 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0025 ohm	23 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified
IRHNJ7130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	58 A	150 mJ	14.4 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	110 ns	-55 Cel	100 ns	TIN LEAD	.2 ohm	14.4 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 100K Rad(Si)
IRLU7821CPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	230 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.01 ohm	30 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRF635	Infineon Technologies	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A		6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.68 ohm	6.8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.