75 W Power Field Effect Transistors (FET) 935

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

JANSF2N7587U3C

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

BUZ90

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

320 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.6 ohm

4.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e0

IRHM7230U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

36 A

330 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

JANSR2N7489T3

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

48 A

60 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.23 ohm

12 A

SINGLE

S-XSFM-P3

DRAIN

Qualified

RADIATION HARDENED

TO-257AA

e0

IRHYB63134CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

150 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

76 A

67 mJ

19 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

19 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

IRFY9130CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

44 A

400 mJ

11.2 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.3 ohm

11.2 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

JANSG2N7483T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

72 A

110 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.04 ohm

18 A

SINGLE

R-CSFM-P3

ISOLATED

Qualified

ULTRA-LOW RESISTANCE

TO-257AA

e0

MIL-19500; RH - 500K Rad(Si)

IRHY54Z30CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

30 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

177 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

18 A

SINGLE

S-CSFM-P3

Not Qualified

ULTRA-LOW RESISTANCE

TO-257AA

e0

BUY15CS23K-01(ES)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

150 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

93 A

90 mJ

23 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

80 ns

.06 ohm

23 A

SINGLE

R-XSFM-P3

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

30 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

IPI80P04P4L-08

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

24 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0082 ohm

80 A

SINGLE

R-PSIP-T3

TO-262AA

e3

90 pF

AEC-Q101

IRHY7130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

58 A

150 mJ

14.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14.4 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

IRHYS63130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

107 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

50 ns

TIN LEAD

.042 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

RH - 300K Rad(Si)

IRHM7130D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

56 A

160 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

IRH8230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

36 A

330 mJ

9 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

RADIATION HARDENED

TO-204AE

e0

IRHY53130CMPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

87 mJ

18 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

65 ns

.07 ohm

18 A

SINGLE

S-XSFM-P3

ISOLATED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

RH - 300K Rad(Si)

JANSR2N7519T3

Infineon Technologies

P-CHANNEL

SINGLE

NO

75 W

1

20 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

3

Qualified

JANSH2N7480U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

88 A

100 mJ

22 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

22 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

e0

MIL-19500/703

JANSR2N7647D5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

784 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.019 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

5 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

IRHYB67130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

107 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

50 ns

TIN LEAD

.042 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

RH - 100K Rad(Si)

JANHCAH2N7484

Infineon Technologies

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

IRHYK57133CMSE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

130 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

73 mJ

20 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.082 ohm

20 A

SINGLE

R-XSIP-T3

Not Qualified

e0

BUY15CS23K01ESH4SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

150 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

93 A

90 mJ

23 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

80 ns

.06 ohm

23 A

SINGLE

R-XSFM-P3

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

30 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

IRFY130C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

57.6 A

69 mJ

14.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.18 ohm

14.4 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

BUY25CS12K-01

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

12.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

50 ns

-55 Cel

55 ns

.13 ohm

12.4 A

SINGLE

R-XSFM-P3

TO-257AA

6 pF

RH - 100K Rad(Si)

IRHYS597034CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

134 mJ

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.087 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

JANSR2N7548T3

Infineon Technologies

P-CHANNEL

SINGLE

NO

75 W

UNSPECIFIED

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

32 A

80 mJ

8 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.515 ohm

8 A

SINGLE

R-XSFM-P3

ISOLATED

Qualified

TO-257AA

MIL-19500; RH - 100K Rad(Si)

IRHYB63230CMPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

16 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

55 ns

50 ns

.13 ohm

16 A

SINGLE

R-XSIP-P3

ISOLATED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

2.6 pF

BUY15CS23J-01(P)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

UNSPECIFIED

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

93 A

90 mJ

23 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

80 ns

.06 ohm

23 A

BOTTOM

R-XBCC-N3

1

DRAIN

30 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

BUZ50B

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

8 ohm

2 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

BUY15CS23J01ESH4SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

UNSPECIFIED

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

93 A

90 mJ

23 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

80 ns

.06 ohm

23 A

BOTTOM

R-XBCC-N3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

30 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

JANSF2N7380U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

57.6 A

150 mJ

14.4 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

110 ns

-55 Cel

100 ns

.2 ohm

14.4 A

BOTTOM

R-CBCC-N3

DRAIN

MIL-19500; RH - 300K Rad(Si)

IRFN240

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

72 A

450 mJ

13.9 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.25 ohm

18 A

BOTTOM

R-CBCC-N3

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

IRHY57234CMSEPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

38.4 A

59 mJ

9.6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

65 ns

.41 ohm

9.6 A

SINGLE

R-XSFM-P3

RADIATION HARDENED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

RH - 100K Rad(Si)

IRHM7130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

56 A

160 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

BUZ32H3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

38 A

120 mJ

9.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

9.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AA

245

IPB70P04P4-09

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

288 A

24 mJ

72 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0094 ohm

72 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IRHY67C30CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

600 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

13.6 A

97 mJ

3.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

42 ns

-55 Cel

61 ns

TIN LEAD

3.1 ohm

3.4 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

RH - 100K Rad(Si)

IRHYB9A3034CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

784 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.019 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

5 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHY7230CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

37.6 A

150 mJ

9.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9.4 A

SINGLE

R-CSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED; AVALANCHE RATED

TO-257AA

e0

IRHM9130

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

44 A

190 mJ

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.325 ohm

11 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

IRFN350

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

56 A

700 mJ

7.5 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.415 ohm

14 A

BOTTOM

R-CBCC-N3

ISOLATED

Not Qualified

HIGH RELIABILITY

e0

MIL-19500/592

IRHY93130CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

44 A

150 mJ

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

11 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY, RADIATION HARDENED

TO-257AA

e0

JANSF2N7589U3C

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

19 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

19 A

JANSR2N7483T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

72 A

110 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.04 ohm

18 A

SINGLE

R-CSFM-P3

ISOLATED

Qualified

ULTRA-LOW RESISTANCE

TO-257AA

e0

MIL-19500; RH - 100K Rad(Si)

IRH9130

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

44 A

190 mJ

11 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.325 ohm

11 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

RADIATION HARDENED

TO-204AA

e0

JANSF2N7647U3C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

160 A

840 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.018 ohm

40 A

BOTTOM

R-CBCC-N3

DRAIN

5 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHM8230U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

36 A

330 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

2N6804

Infineon Technologies

P-CHANNEL

SINGLE

NO

75 W

METAL

SWITCHING

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

50 A

81 mJ

11 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.3 ohm

11 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

AVALANCHE RATED

TO-204AA

e0

MILITARY STANDARD (USA)

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.