75 W Power Field Effect Transistors (FET) 935

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BLF6G27LS-75,112

NXP Semiconductors

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

18 A

BUK9Y30-75B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

137 A

78 mJ

30 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.03 ohm

34 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-235

e3

30

260

BLF6G27-75,112

NXP Semiconductors

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

18 A

BLF6G27LS-75,118

NXP Semiconductors

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

18 A

BUK7Y13-40B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

91 mJ

55 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.013 ohm

55 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

260

BUK9Y11-30B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

59 A

1

e3

30

260

BUK7Y13-40B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

55 A

1

e3

30

260

IRHYS63234CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

48 A

80 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

46 ns

-55 Cel

56 ns

TIN LEAD

.22 ohm

12 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

2.2 pF

MIL-19500; RH - 300K Rad(Si)

JANSF2N7647U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

160 A

840 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.018 ohm

40 A

BOTTOM

R-CBCC-N3

DRAIN

5 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

JANHCA2N6804

Infineon Technologies

P-CHANNEL

SINGLE

YES

75 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

50 A

11 A

3

UNCASED CHIP

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

11 A

UPPER

R-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/562D

IRHY54130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

87 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

18 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

JANSF2N7648T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

605 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.035 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

3.3 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHYB67230CMSCV

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

16 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

55 ns

50 ns

.13 ohm

16 A

SINGLE

R-XSIP-P3

ISOLATED

TO-257AA

2.6 pF

RH - 1000K Rad(Si)

IRH7230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

36 A

330 mJ

9 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

RADIATION HARDENED

TO-204AE

e0

BUY15CS23K-01(P)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

150 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

93 A

90 mJ

23 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

80 ns

.06 ohm

23 A

SINGLE

R-XSFM-P3

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

30 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

JANSF2N7383

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

26 A

165 mJ

6.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

6.5 A

SINGLE

S-CSFM-P3

Not Qualified

TO-257AA

e0

MIL-19500/615

IRH7130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

56 A

160 mJ

14 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

RADIATION HARDENED

TO-204AA

e0

BUY25CS12K-11(ES)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

12.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

50 ns

-55 Cel

55 ns

.13 ohm

12.4 A

SINGLE

R-XSFM-P3

TO-257AA

6 pF

RH - 100K Rad(Si)

IRHLYS793034CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

181 mJ

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.074 ohm

20 A

SINGLE

R-CSFM-P3

Not Qualified

TO-257AA

e0

BUZ90A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

320 mJ

3.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

2 ohm

4 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e0

IRHYB597034CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

134 mJ

20 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.087 ohm

20 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e0

IMZ120R220M1H

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

13 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

TIN

.372 ohm

13 A

SINGLE

R-PSFM-T4

TO-247

e3

2 pF

IRHY593230CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

32 A

80 mJ

8 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.515 ohm

8 A

SINGLE

R-MSFM-P3

Not Qualified

TO-257AA

e0

IRHYB9A7130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

605 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.035 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

3.3 pF

MIL-19500; RH - 100K Rad(Si)

IRHYS9A3130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

605 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.035 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

3.3 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHYS63230CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

16 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

FAST SWITCHING

TO-257AA

e0

BUY15CS23J-01(ES)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

UNSPECIFIED

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

93 A

90 mJ

23 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

80 ns

.06 ohm

23 A

BOTTOM

R-XBCC-N3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

30 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

JANSF2N7519U3

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

88 A

152 mJ

22 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

120 ns

.07 ohm

22 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

MIL-19500; RH - 300K Rad(Si)

IRHF58034CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

72 A

110 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

18 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

40

260

JANSH2N7484T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

87 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

18 A

SINGLE

S-XSFM-P3

ISOLATED

Qualified

TO-257AA

e0

BUZ50C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

2.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

6 ohm

2.3 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

JANSF2N7593U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

49.6 A

56 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 ns

-55 Cel

90 ns

.21 ohm

12.4 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2.4 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHYB9A7034CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

784 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.019 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

5 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

2N6806

Infineon Technologies

P-CHANNEL

SINGLE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

28 A

66 mJ

6.5 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

6.5 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

AVALANCHE RATED

TO-204AA

e0

MILITARY STANDARD (USA)

BUZ40B

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

570 mJ

8.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

JANSR2N7547T3

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

94 mJ

12.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

130 ns

TIN LEAD

.215 ohm

12.5 A

SINGLE

R-XSFM-P3

ISOLATED

Qualified

TO-257AA

e0

MIL-19500; RH - 100K Rad(Si)

IRHY63434CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

550 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

13.6 A

97 mJ

3.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 ohm

3.4 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

RH - 300K Rad(Si)

IRH3130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

56 A

160 mJ

14 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

e0

IRHYB597Z30CMSCS

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

30 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

200 mJ

20 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

120 ns

.072 ohm

20 A

SINGLE

R-XSIP-P3

ISOLATED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

114 pF

MIL-19500

BUY10CS12J01ESZZZA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

100 Cel

SILICON

60 ns

-55 Cel

55 ns

.13 ohm

12.4 A

BOTTOM

R-PBCC-N3

DRAIN

6 pF

ESA/SCC 5205/028; RH - 100K Rad(Si)

IRHY597034CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

72 A

120 mJ

18 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

18 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

JANKCAH2N7484

Infineon Technologies

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

IPI70P04P4L-08

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

24 mJ

80 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0082 ohm

80 A

SINGLE

R-PSIP-T3

LOGIC LEVEL COMPATIBLE

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IRHM7130U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

56 A

160 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

IRHY593130CMSCS

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

94 mJ

12.5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

130 ns

.215 ohm

12.5 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

MIL-19500

JANHCA2N6758

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

UNSPECIFIED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

36 A

9 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

9 A

UPPER

R-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/542G

IRFAC30

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

3.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3.6 A

e0

JANSR2N7520T3

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

134 mJ

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

90 ns

-55 Cel

125 ns

.087 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

Qualified

HIGH RELIABILITY

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

62 pF

MIL-19500; RH - 100K Rad(Si)

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.