Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 mJ |
50 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
31 ns |
-55 Cel |
30 ns |
MATTE TIN |
13.4 ohm |
50 A |
DUAL |
R-PDSO-N5 |
1 |
DRAIN |
AVALANCHE ENERGY RATED |
e3 |
30 |
260 |
14 pF |
AEC-Q101 |
|||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
152 mJ |
22 A |
3 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
125 ns |
-55 Cel |
120 ns |
.07 ohm |
22 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Qualified |
MIL-19500; RH - 100K Rad(Si) |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
METAL |
SWITCHING |
200 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
36 A |
54 mJ |
9 A |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.49 ohm |
9 A |
BOTTOM |
O-MBFM-P2 |
DRAIN |
Qualified |
AVALANCHE RATED |
TO-204AA |
e0 |
MIL-19500/542 |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
METAL |
SWITCHING |
200 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
36 A |
54 mJ |
9 A |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.49 ohm |
9 A |
BOTTOM |
O-MBFM-P2 |
DRAIN |
Qualified |
AVALANCHE RATED |
TO-204AA |
e0 |
MIL-19500/542 |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
140 mJ |
28 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.044 ohm |
28 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e0 |
||||||||||||||||||||||
Fairchild Semiconductor |
N-CHANNEL |
SINGLE |
NO |
75 W |
ENHANCEMENT MODE |
1 |
30 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn85Pb15) |
30 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 mJ |
36 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.026 ohm |
7 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 mJ |
36 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.026 ohm |
7 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
62 ns |
-55 Cel |
150 ns |
.043 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-252AA |
AEC-Q101 |
||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
METAL |
SWITCHING |
200 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
28 A |
66 mJ |
6.5 A |
2 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.92 ohm |
6.5 A |
BOTTOM |
O-MBFM-P2 |
DRAIN |
Not Qualified |
TO-204AA |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
70 mJ |
22 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
125 ns |
-55 Cel |
65 ns |
TIN LEAD |
.06 ohm |
22 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Not Qualified |
e0 |
50 pF |
||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
50 A |
96 mJ |
12.5 A |
3 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.205 ohm |
12.5 A |
BOTTOM |
R-PBCC-N3 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
e0 |
|||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
75 mJ |
8 A |
3 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN LEAD |
.505 ohm |
8 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
e0 |
RH - 100K Rad(Si) |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
150 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
76 A |
60 mJ |
19 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.088 ohm |
19 A |
BOTTOM |
R-CBCC-N3 |
Not Qualified |
e0 |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
76 A |
60 mJ |
16 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.13 ohm |
19 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
76 A |
60 mJ |
16 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.13 ohm |
19 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
75 W |
ENHANCEMENT MODE |
1 |
3.4 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
3.4 A |
|||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
60 mJ |
12 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
125 ns |
-55 Cel |
65 ns |
TIN LEAD |
.22 ohm |
12 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Qualified |
RADIATION HARDENED |
e0 |
11 pF |
MIL-19500 |
||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
65 A |
17 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.12 ohm |
17 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
FAST SWITCHING |
TO-220AB |
e0 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
104 A |
120 mJ |
25 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
95 W |
175 Cel |
SILICON |
175 ns |
450 ns |
MATTE TIN |
.055 ohm |
26 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
200 pF |
|||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 mJ |
7 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.058 ohm |
7 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 mJ |
50 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
34 ns |
-55 Cel |
30 ns |
Matte Tin (Sn) - annealed |
.01 ohm |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 mJ |
50 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
20 ns |
-55 Cel |
222 ns |
MATTE TIN |
.0135 ohm |
50 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240AA |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
METAL |
SWITCHING |
100 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
50 A |
81 mJ |
11 A |
2 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN LEAD |
.35 ohm |
11 A |
BOTTOM |
O-MBFM-P2 |
DRAIN |
Not Qualified |
TO-204AA |
e0 |
||||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
260 A |
230 mJ |
65 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - with Nickel (Ni) barrier |
.01 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE |
YES |
75 W |
ENHANCEMENT MODE |
1 |
65 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
MATTE TIN OVER NICKEL |
65 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
260 A |
230 mJ |
65 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - with Nickel (Ni) barrier |
.01 ohm |
65 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
TO-251AA |
e3 |
30 |
260 |
|||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
75 W |
ENHANCEMENT MODE |
1 |
10 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
10 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 mJ |
40 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
195 ns |
-55 Cel |
101 ns |
.019 ohm |
7.1 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-252AA |
AEC-Q101 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
370 A |
114 mJ |
92 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0048 ohm |
78 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
216 mJ |
12 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.3 ohm |
12 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e0 |
235 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
40 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
520 A |
137 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0034 ohm |
109 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
19 pF |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
84 A |
58 mJ |
19 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
110 W |
175 Cel |
SILICON |
120 ns |
310 ns |
MATTE TIN |
.1 ohm |
21 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
300 pF |
|||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
216 mJ |
12 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.3 ohm |
12 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
e0 |
|||||||||||||||||||||||
Motorola |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
21 A |
7 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
75 W |
150 Cel |
SILICON |
160 ns |
150 ns |
TIN LEAD |
.6 ohm |
7 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LEADFORM OPTIONS ARE AVAILABLE |
TO-220AB |
e0 |
150 pF |
|||||||||||||||||
Fairchild Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
12 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.3 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e0 |
||||||||||||||||||||||
Samsung |
N-CHANNEL |
SINGLE |
NO |
75 W |
PLASTIC/EPOXY |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
5 ohm |
3 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
METAL |
SWITCHING |
500 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
18 A |
1.1 mJ |
4.5 A |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN LEAD |
1.8 ohm |
4.5 A |
BOTTOM |
O-MBFM-P2 |
DRAIN |
Not Qualified |
TO-204AA |
e0 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
200 mJ |
22 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.052 ohm |
22 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e0 |
|||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
80 mJ |
2 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
6 ohm |
2 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e0 |
235 |
|||||||||||||||||||
|
Nte Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
2 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
75 W |
SILICON |
100 ns |
90 ns |
3 ohm |
2.5 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
Intersil |
N-CHANNEL |
SINGLE |
NO |
75 W |
ENHANCEMENT MODE |
1 |
12 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
12 A |
e0 |
|||||||||||||||||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
YES |
75 W |
ENHANCEMENT MODE |
1 |
34 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Tin/Lead (Sn/Pb) |
34 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
YES |
75 W |
ENHANCEMENT MODE |
1 |
30 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
-55 Cel |
Matte Tin (Sn) - with Nickel (Ni) barrier |
30 A |
1 |
e3 |
||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
75 W |
ENHANCEMENT MODE |
1 |
8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
8 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28 A |
12 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.3 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LEADFORM OPTIONS ARE AVAILABLE |
TO-220AB |
e3 |
40 |
260 |
||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
290 mJ |
5 A |
3 |
FLANGE MOUNT |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1 ohm |
5 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e0 |
235 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 mJ |
50 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
31 ns |
-55 Cel |
30 ns |
Matte Tin (Sn) - annealed |
.0134 ohm |
50 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.