75 W Power Field Effect Transistors (FET) 935

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRHM8130D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

56 A

160 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

IRFY430CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

18 A

280 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

1.5 ohm

4.5 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

IRHY53130CMSCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

87 mJ

18 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

65 ns

.07 ohm

18 A

SINGLE

S-XSFM-P3

ISOLATED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

JANKCAF2N7382

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SINGLE

YES

75 W

UNSPECIFIED

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

11 A

3

UNCASED CHIP

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

11 A

UPPER

R-XUUC-N3

1

DRAIN

Qualified

RADIATION HARDENED

MIL-19500/657A

BUZ205

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

6 A

e0

JANSR2N7648T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

605 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.035 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

3.3 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

IRHLYS77034CMS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

98 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

136 ns

-55 Cel

88 ns

.045 ohm

20 A

SINGLE

R-XSFM-P3

HIGH RELIABILITY

TO-257AA

RH - 100K Rad(Si)

IRHY4230CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

37.6 A

150 mJ

9.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9.4 A

SINGLE

R-CSFM-P3

Not Qualified

TO-257AA

e0

IRHLYS797034CMS

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

181 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

297 ns

-55 Cel

185 ns

.074 ohm

20 A

SINGLE

R-XSFM-P3

TO-257AA

86 pF

MIL-STD-750; RH - 100K Rad(Si)

IRHY8130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

58 A

150 mJ

14.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14.4 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

JANSH2N7481U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

88 A

70 mJ

22 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

22 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

e0

MIL-19500/703

JANSR2N7380U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

57.6 A

150 mJ

14.4 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

110 ns

-55 Cel

100 ns

.2 ohm

14.4 A

BOTTOM

R-CBCC-N3

DRAIN

MIL-19500; RH - 100K Rad(Si)

IRHYB9A3130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

605 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.035 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

3.3 pF

MIL-19500; RH - 300K Rad(Si)

IPC100N04S5L-2R6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

66 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0036 ohm

100 A

DUAL

R-PDSO-F8

1

DRAIN

e3

48 pF

AEC-Q101

IPP70P04P4-09

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

288 A

24 mJ

72 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0094 ohm

72 A

SINGLE

R-PSFM-T3

TO-220AB

e3

IRHLYS797034CMSCS

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

181 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

297 ns

-55 Cel

185 ns

.074 ohm

20 A

SINGLE

R-XSFM-P3

RADIATION HARDENED

TO-257AA

MIL-19500

IRHY57133CMSE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

130 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

80 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

18 A

SINGLE

S-CSFM-P3

Not Qualified

TO-257AA

e0

IRHYS63134CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

150 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

76 A

67 mJ

19 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

19 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

JANSF2N7647T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

784 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.019 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

5 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHYB67130CMSCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

107 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

50 ns

.042 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

JANSR2N7556T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

38.4 A

59 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

65 ns

.41 ohm

9.6 A

SINGLE

R-XSFM-P3

TO-257AA

9 pF

MIL-19500; RH - 100K Rad(Si)

IRHY57034CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

72 A

110 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.04 ohm

18 A

SINGLE

R-CSFM-P3

ISOLATED

Not Qualified

ULTRA-LOW RESISTANCE

TO-257AA

e0

JANSF2N7594T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

48 A

80 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

46 ns

-55 Cel

56 ns

.22 ohm

12 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

2.2 pF

MIL-19500; RH - 300K Rad(Si)

IRHYS593034CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

134 mJ

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.087 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

IRFNG40

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

1000 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

15.6 A

530 mJ

3 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4.2 ohm

3.9 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

HIGH RELIABILITY

e0

IRHY63C30CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

600 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

13.6 A

97 mJ

3.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

42 ns

-55 Cel

61 ns

TIN LEAD

3.1 ohm

3.4 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

RH - 300K Rad(Si)

IRHY597130CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

94 mJ

12.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

130 ns

TIN LEAD

.215 ohm

12.5 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

IRHY57Z30CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

30 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

177 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

18 A

SINGLE

S-CSFM-P3

Not Qualified

ULTRA-LOW RESISTANCE

TO-257AA

e0

IRHYS67230CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

16 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

FAST SWITCHING

TO-257AA

e0

IRHY67C30CSCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

600 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

13.6 A

97 mJ

3.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

42 ns

-55 Cel

61 ns

3.1 ohm

3.4 A

SINGLE

R-XSFM-P3

ISOLATED

HIGH RELIABILITY

TO-257AA

RH - 100K Rad(Si)

BUZ32H

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

38 A

120 mJ

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

9.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRHY53130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

87 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

65 ns

TIN LEAD

.07 ohm

18 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

RH - 300K Rad(Si)

JANSR2N7488T3

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

UNSPECIFIED

SWITCHING

130 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

80 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

18 A

SINGLE

S-XSFM-P3

DRAIN

Qualified

RADIATION HARDENED

TO-257AA

e0

IRHYB63130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

107 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.042 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

BUY15CS23K-01

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

150 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

93 A

90 mJ

23 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

80 ns

.06 ohm

23 A

SINGLE

R-XSFM-P3

TO-257AA

30 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

IRHYS67130CSCSA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

107 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

50 ns

.042 ohm

20 A

SINGLE

R-XSFM-P3

RADIATION HARDENED

TO-257AA

MIL-19500

IMW65R107M1H

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

76 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-55 Cel

TIN

.142 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

HIGH RELIABILITY

TO-247

e3

7 pF

BUZ50

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

2.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.5 A

e0

IRHLYS77034CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

98 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

136 ns

-55 Cel

88 ns

TIN LEAD

.045 ohm

20 A

SINGLE

R-XSFM-P3

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

RH - 100K Rad(Si)

IRHLYS73034CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

98 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

136 ns

-55 Cel

88 ns

TIN LEAD

.045 ohm

20 A

SINGLE

R-XSFM-P3

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

RH - 300K Rad(Si)

BUY10CS12J-01(ES)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

100 Cel

SILICON

60 ns

-55 Cel

55 ns

.13 ohm

12.4 A

BOTTOM

R-PBCC-N3

DRAIN

6 pF

ESA/SCC 5205/028; RH - 100K Rad(Si)

IRFAG30

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

1000 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

9.2 A

110 mJ

2.3 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

6.5 ohm

2.3 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

e0

IRHYS597Z30CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

30 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

200 mJ

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.072 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

BUY25CS12K-01(P)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

12.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

50 ns

-55 Cel

55 ns

.13 ohm

12.4 A

SINGLE

R-XSFM-P3

TO-257AA

6 pF

RH - 100K Rad(Si)

IRHYS67134CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

150 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

76 A

67 mJ

19 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

19 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

IRHYB64230CM

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

BUZ215

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

BUZ310

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

2.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218AA

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.