75 W Power Field Effect Transistors (FET) 935

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRHY8230CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

37.6 A

150 mJ

9.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9.4 A

SINGLE

R-CSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED; AVALANCHE RATED

TO-257AA

e0

JANSH2N7380U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

57.6 A

150 mJ

14.4 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

110 ns

-55 Cel

100 ns

.2 ohm

14.4 A

BOTTOM

R-CBCC-N3

DRAIN

MIL-19500; RH - 1000K Rad(Si)

JANSR2N7592T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 ns

-55 Cel

50 ns

.13 ohm

16 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

2.6 pF

MIL-19500; RH - 100K Rad(Si)

IRHYS67130CMPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

107 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

50 ns

.042 ohm

20 A

SINGLE

R-XSFM-P3

RADIATION HARDENED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500; RH - 100K Rad(Si)

JANSR2N7647U3C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

160 A

840 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.018 ohm

40 A

BOTTOM

R-CBCC-N3

DRAIN

5 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

IRHLYS793034CMS

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

181 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

297 ns

-55 Cel

185 ns

.074 ohm

20 A

SINGLE

R-XSFM-P3

TO-257AA

86 pF

MIL-STD-750; RH - 300K Rad(Si)

IRFY130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

57.6 A

69 mJ

14.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

14.4 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

JANSF2N7648U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

140 A

605 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

81 ns

-55 Cel

65 ns

.034 ohm

35 A

BOTTOM

R-CBCC-N3

DRAIN

3.3 pF

MIL-PRF-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHM7230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

36 A

330 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.49 ohm

9 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

IRHYS593Z30CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

30 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

200 mJ

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.072 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

TO-257AA

e0

IRFN440

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

32 A

700 mJ

6.1 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.95 ohm

8 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

HIGH RELIABILITY

e0

MIL-19500/596

IRHYB67230CMPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

16 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

55 ns

50 ns

.13 ohm

16 A

SINGLE

R-XSIP-P3

ISOLATED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

2.6 pF

2N7593U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

49.6 A

56 mJ

12.4 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 ns

-55 Cel

90 ns

.21 ohm

12.4 A

BOTTOM

R-CBCC-N3

DRAIN

IRHYB67230CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

64 A

83 mJ

16 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

16 A

SINGLE

R-XSIP-P3

ISOLATED

Not Qualified

TO-257AA

e0

IRHY57234CSE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

38.4 A

59 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

65 ns

.41 ohm

9.6 A

SINGLE

R-XSFM-P3

TO-257AA

9 pF

MIL-19500; RH - 100K Rad(Si)

IRHY54034CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

72 A

110 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.04 ohm

18 A

SINGLE

R-CSFM-P3

ISOLATED

Not Qualified

ULTRA-LOW RESISTANCE

TO-257AA

e0

BUY10CS12J-01(P)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

50 A

60 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

100 Cel

SILICON

60 ns

-55 Cel

55 ns

.13 ohm

12.4 A

BOTTOM

R-PBCC-N3

DRAIN

6 pF

ESA/SCC 5205/028; RH - 100K Rad(Si)

BUZ206

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5 A

e0

JANSR2N7647T3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

784 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.019 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

5 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

IPB70P04P4L-08

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

24 mJ

80 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0082 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

260

JANHCA2N6756

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

56 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

14 A

UPPER

R-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/542G

IRHYS9A7034CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

784 mJ

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.019 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

5 pF

MIL-STD-750; RH - 100K Rad(Si)

IRHY58Z30CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

30 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

177 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

18 A

SINGLE

S-CSFM-P3

Not Qualified

TO-257AA

e0

IRHM8130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

56 A

160 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

BUY15CS23J-01

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

UNSPECIFIED

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

93 A

90 mJ

23 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

80 ns

.06 ohm

23 A

BOTTOM

R-XBCC-N3

DRAIN

30 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

JANSF2N7647D5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

120 A

784 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

75 ns

.019 ohm

30 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

5 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHY4130CM

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

58 A

150 mJ

14.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

14.4 A

SINGLE

R-XSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

JANSR2N7481U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

88 A

70 mJ

22 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

65 ns

TIN LEAD

.06 ohm

22 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

e0

50 pF

MIL-19500

IRHYB67130CMPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

107 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

50 ns

.042 ohm

20 A

SINGLE

R-XSFM-P3

ISOLATED

TO-257AA

NOT SPECIFIED

NOT SPECIFIED

RH - 100K Rad(Si)

IRHYB593Z30CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

UNSPECIFIED

SWITCHING

30 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

200 mJ

20 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.072 ohm

20 A

SINGLE

R-XSIP-P3

ISOLATED

Not Qualified

e0

520503101R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

UNSPECIFIED

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

93 A

90 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

80 ns

.06 ohm

23 A

BOTTOM

R-XBCC-N3

DRAIN

30 pF

ESA/SCC 5205/031; RH - 100K Rad(Si)

JANSF2N7648U3C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

140 A

605 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

81 ns

-55 Cel

65 ns

.034 ohm

35 A

BOTTOM

R-CBCC-N3

DRAIN

3.3 pF

MIL-PRF-19500; MIL-STD-750; RH - 300K Rad(Si)

JANSR2N7648U3C

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

140 A

605 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

81 ns

-55 Cel

65 ns

.034 ohm

35 A

BOTTOM

R-CBCC-N3

DRAIN

3.3 pF

MIL-PRF-19500; MIL-STD-750; RH - 100K Rad(Si)

SPU28N03L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

145 mJ

28 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.028 ohm

30 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e0

SPU28N03

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

145 mJ

28 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.023 ohm

28 A

SINGLE

R-PSIP-T3

Not Qualified

e0

SPU28N05L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

140 mJ

28 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.044 ohm

28 A

SINGLE

R-PSIP-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

SPB30N03

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

145 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.023 ohm

30 A

SINGLE

R-PSSO-G2

Not Qualified

AVALANCHE RATED

e0

SPP30N03

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

145 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.023 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

e0

SPD31N05

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

124 A

140 mJ

31 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.036 ohm

31 A

SINGLE

R-PSSO-G2

Not Qualified

e0

SPD28N03L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

112 A

145 mJ

28 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.028 ohm

30 A

SINGLE

R-PSSO-G2

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e0

SPP30N03L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

145 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.028 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

SPU31N05

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

124 A

140 mJ

31 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.036 ohm

31 A

SINGLE

R-PSIP-T3

Not Qualified

e0

SPB30N03L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

145 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.028 ohm

30 A

SINGLE

R-PSSO-G2

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

SPD28N03

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

112 A

145 mJ

28 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.023 ohm

28 A

SINGLE

R-PSSO-G2

Not Qualified

e0

IRHN450

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

8 A

e0

IRHNJ58130

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

88 A

70 mJ

22 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

22 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

e0

BUZ15

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

45 A

e0

IRF5Y9540CM

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

72 A

256 mJ

18 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.117 ohm

18 A

SINGLE

R-MSFM-P3

Not Qualified

AVALANCHE RATED

TO-257AA

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.