Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
200 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
37.6 A |
150 mJ |
9.4 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.49 ohm |
9.4 A |
SINGLE |
R-CSFM-P3 |
ISOLATED |
Not Qualified |
RADIATION HARDENED; AVALANCHE RATED |
TO-257AA |
e0 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
57.6 A |
150 mJ |
14.4 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
110 ns |
-55 Cel |
100 ns |
.2 ohm |
14.4 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
MIL-19500; RH - 1000K Rad(Si) |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
200 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
83 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
55 ns |
-55 Cel |
50 ns |
.13 ohm |
16 A |
SINGLE |
R-XSFM-P3 |
ISOLATED |
TO-257AA |
2.6 pF |
MIL-19500; RH - 100K Rad(Si) |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
100 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
107 mJ |
20 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
70 ns |
-55 Cel |
50 ns |
.042 ohm |
20 A |
SINGLE |
R-XSFM-P3 |
RADIATION HARDENED |
TO-257AA |
NOT SPECIFIED |
NOT SPECIFIED |
MIL-19500; RH - 100K Rad(Si) |
||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
840 mJ |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
60 ns |
-55 Cel |
75 ns |
.018 ohm |
40 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
5 pF |
MIL-19500; MIL-STD-750; RH - 100K Rad(Si) |
||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
60 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
181 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
297 ns |
-55 Cel |
185 ns |
.074 ohm |
20 A |
SINGLE |
R-XSFM-P3 |
TO-257AA |
86 pF |
MIL-STD-750; RH - 300K Rad(Si) |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
100 V |
PIN/PEG |
SQUARE |
ENHANCEMENT MODE |
1 |
57.6 A |
69 mJ |
14.4 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.18 ohm |
14.4 A |
SINGLE |
S-XSFM-P3 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
TO-257AA |
e0 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
605 mJ |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
81 ns |
-55 Cel |
65 ns |
.034 ohm |
35 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
3.3 pF |
MIL-PRF-19500; MIL-STD-750; RH - 300K Rad(Si) |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
METAL |
SWITCHING |
200 V |
PIN/PEG |
SQUARE |
ENHANCEMENT MODE |
1 |
36 A |
330 mJ |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.49 ohm |
9 A |
SINGLE |
S-MSFM-P3 |
ISOLATED |
Not Qualified |
RADIATION HARDENED |
TO-254AA |
e0 |
||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
30 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
200 mJ |
20 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.072 ohm |
20 A |
SINGLE |
R-XSFM-P3 |
ISOLATED |
Not Qualified |
TO-257AA |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
500 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
700 mJ |
6.1 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.95 ohm |
8 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
e0 |
MIL-19500/596 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
200 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
83 mJ |
16 A |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
55 ns |
50 ns |
.13 ohm |
16 A |
SINGLE |
R-XSIP-P3 |
ISOLATED |
TO-257AA |
NOT SPECIFIED |
NOT SPECIFIED |
2.6 pF |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
250 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
49.6 A |
56 mJ |
12.4 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
55 ns |
-55 Cel |
90 ns |
.21 ohm |
12.4 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
200 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
83 mJ |
16 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.13 ohm |
16 A |
SINGLE |
R-XSIP-P3 |
ISOLATED |
Not Qualified |
TO-257AA |
e0 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
250 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
38.4 A |
59 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
125 ns |
-55 Cel |
65 ns |
.41 ohm |
9.6 A |
SINGLE |
R-XSFM-P3 |
TO-257AA |
9 pF |
MIL-19500; RH - 100K Rad(Si) |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
60 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
72 A |
110 mJ |
16 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.04 ohm |
18 A |
SINGLE |
R-CSFM-P3 |
ISOLATED |
Not Qualified |
ULTRA-LOW RESISTANCE |
TO-257AA |
e0 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
50 A |
60 mJ |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
100 Cel |
SILICON |
60 ns |
-55 Cel |
55 ns |
.13 ohm |
12.4 A |
BOTTOM |
R-PBCC-N3 |
DRAIN |
6 pF |
ESA/SCC 5205/028; RH - 100K Rad(Si) |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
75 W |
ENHANCEMENT MODE |
1 |
5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
5 A |
e0 |
|||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
60 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
784 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
60 ns |
-55 Cel |
75 ns |
.019 ohm |
30 A |
SINGLE |
R-XSFM-P3 |
ISOLATED |
TO-257AA |
5 pF |
MIL-19500; MIL-STD-750; RH - 100K Rad(Si) |
|||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
24 mJ |
80 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0082 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
TO-263AB |
260 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
75 W |
UNSPECIFIED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
56 A |
3 |
UNCASED CHIP |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
14 A |
UPPER |
R-XUUC-N3 |
DRAIN |
Qualified |
e0 |
MIL-19500/542G |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
60 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
784 mJ |
30 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
60 ns |
-55 Cel |
75 ns |
.019 ohm |
30 A |
SINGLE |
R-XSFM-P3 |
ISOLATED |
TO-257AA |
5 pF |
MIL-STD-750; RH - 100K Rad(Si) |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
30 V |
PIN/PEG |
SQUARE |
ENHANCEMENT MODE |
1 |
72 A |
177 mJ |
16 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.03 ohm |
18 A |
SINGLE |
S-CSFM-P3 |
Not Qualified |
TO-257AA |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
PIN/PEG |
SQUARE |
ENHANCEMENT MODE |
1 |
56 A |
160 mJ |
14 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.2 ohm |
14 A |
SINGLE |
S-CSFM-P3 |
ISOLATED |
Not Qualified |
RADIATION HARDENED |
TO-254AA |
e0 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
UNSPECIFIED |
150 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
93 A |
90 mJ |
23 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
80 ns |
-55 Cel |
80 ns |
.06 ohm |
23 A |
BOTTOM |
R-XBCC-N3 |
DRAIN |
30 pF |
EUROPEAN SPACE AGENCY; RH - 100K Rad(Si) |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
60 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
784 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
60 ns |
-55 Cel |
75 ns |
.019 ohm |
30 A |
SINGLE |
R-XSFM-P3 |
ISOLATED |
TO-257AA |
5 pF |
MIL-19500; MIL-STD-750; RH - 300K Rad(Si) |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
100 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
58 A |
150 mJ |
14.4 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.2 ohm |
14.4 A |
SINGLE |
R-XSFM-P3 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
TO-257AA |
e0 |
||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
70 mJ |
22 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
125 ns |
-55 Cel |
65 ns |
TIN LEAD |
.06 ohm |
22 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Qualified |
e0 |
50 pF |
MIL-19500 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
100 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
107 mJ |
20 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
70 ns |
-55 Cel |
50 ns |
.042 ohm |
20 A |
SINGLE |
R-XSFM-P3 |
ISOLATED |
TO-257AA |
NOT SPECIFIED |
NOT SPECIFIED |
RH - 100K Rad(Si) |
||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
UNSPECIFIED |
SWITCHING |
30 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
200 mJ |
20 A |
3 |
IN-LINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.072 ohm |
20 A |
SINGLE |
R-XSIP-P3 |
ISOLATED |
Not Qualified |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
UNSPECIFIED |
150 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
93 A |
90 mJ |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
80 ns |
-55 Cel |
80 ns |
.06 ohm |
23 A |
BOTTOM |
R-XBCC-N3 |
DRAIN |
30 pF |
ESA/SCC 5205/031; RH - 100K Rad(Si) |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
605 mJ |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
81 ns |
-55 Cel |
65 ns |
.034 ohm |
35 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
3.3 pF |
MIL-PRF-19500; MIL-STD-750; RH - 300K Rad(Si) |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
605 mJ |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
81 ns |
-55 Cel |
65 ns |
.034 ohm |
35 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
3.3 pF |
MIL-PRF-19500; MIL-STD-750; RH - 100K Rad(Si) |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
145 mJ |
28 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.028 ohm |
30 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
145 mJ |
28 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.023 ohm |
28 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
140 mJ |
28 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.044 ohm |
28 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
145 mJ |
30 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.023 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
AVALANCHE RATED |
e0 |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
145 mJ |
30 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.023 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
e0 |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
124 A |
140 mJ |
31 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.036 ohm |
31 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
145 mJ |
28 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.028 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
145 mJ |
30 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.028 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
124 A |
140 mJ |
31 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.036 ohm |
31 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
145 mJ |
30 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.028 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
145 mJ |
28 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.023 ohm |
28 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
75 W |
ENHANCEMENT MODE |
1 |
8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
Tin/Lead (Sn/Pb) |
8 A |
e0 |
||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
70 mJ |
22 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.06 ohm |
22 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
75 W |
ENHANCEMENT MODE |
1 |
45 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
45 A |
e0 |
|||||||||||||||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
METAL |
SWITCHING |
100 V |
PIN/PEG |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
72 A |
256 mJ |
18 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.117 ohm |
18 A |
SINGLE |
R-MSFM-P3 |
Not Qualified |
AVALANCHE RATED |
TO-257AA |
e0 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.