Infineon Technologies - IPB70P04P4L-08

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IPB70P04P4L-08 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB70P04P4L-08
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Drain-Source On Resistance: .0082 ohm; Peak Reflow Temperature (C): 260;
Datasheet IPB70P04P4L-08 Datasheet
In Stock764
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 75 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0082 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 24 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 80 A
Peak Reflow Temperature (C): 260
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