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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRHLYS793034CMS |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 80 A; |
| Datasheet | IRHLYS793034CMS Datasheet |
| In Stock | 503 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 297 ns |
| Maximum Drain Current (ID): | 20 A |
| Maximum Pulsed Drain Current (IDM): | 80 A |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 75 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 185 ns |
| JESD-30 Code: | R-XSFM-P3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | PIN/PEG |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .074 ohm |
| Avalanche Energy Rating (EAS): | 181 mJ |
| Maximum Feedback Capacitance (Crss): | 86 pF |
| JEDEC-95 Code: | TO-257AA |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | MIL-STD-750; RH - 300K Rad(Si) |
