Infineon Technologies - JANSR2N7592T3

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JANSR2N7592T3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7592T3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Pulsed Drain Current (IDM): 64 A; Operating Mode: ENHANCEMENT MODE;
Datasheet JANSR2N7592T3 Datasheet
In Stock732
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 55 ns
Maximum Drain Current (ID): 16 A
Maximum Pulsed Drain Current (IDM): 64 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 75 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 50 ns
JESD-30 Code: R-XSFM-P3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .13 ohm
Avalanche Energy Rating (EAS): 83 mJ
Maximum Feedback Capacitance (Crss): 2.6 pF
JEDEC-95 Code: TO-257AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 200 V
Reference Standard: MIL-19500; RH - 100K Rad(Si)
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