International Rectifier - IRF3415STRLPBF

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IRF3415STRLPBF by International Rectifier

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Manufacturer International Rectifier
Manufacturer's Part Number IRF3415STRLPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
Datasheet IRF3415STRLPBF Datasheet
In Stock2,599
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 43 A
Maximum Pulsed Drain Current (IDM): 150 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .042 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 590 mJ
Other Names: IRF3415STRLPBFCT
SP001553944
IRF3415STRLPBFDKR
IRF3415STRLPBFTR
IRF3415STRLPBF-ND
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH RELIABILITY
Peak Reflow Temperature (C): 260
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