520503101R by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	520503101R
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Minimum DS Breakdown Voltage: 150 V; Package Style (Meter): CHIP CARRIER;
Datasheet	520503101R Datasheet
In Stock	504

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	80 ns
Maximum Drain Current (ID):	23 A
Maximum Pulsed Drain Current (IDM):	93 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	75 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
Maximum Turn Off Time (toff):	80 ns
JESD-30 Code:	R-XBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.06 ohm
Avalanche Energy Rating (EAS):	90 mJ
Maximum Feedback Capacitance (Crss):	30 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	150 V
Reference Standard:	ESA/SCC 5205/031; RH - 100K Rad(Si)

Pricing (USD)

Qty.	Unit Price	Ext. Price
504	-	-

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