Infineon Technologies - JANSR2N7648U3C

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JANSR2N7648U3C by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSR2N7648U3C
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Pulsed Drain Current (IDM): 140 A; JESD-30 Code: R-CBCC-N3;
Datasheet JANSR2N7648U3C Datasheet
In Stock484
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 81 ns
Maximum Drain Current (ID): 35 A
Maximum Pulsed Drain Current (IDM): 140 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 75 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
Maximum Turn Off Time (toff): 65 ns
JESD-30 Code: R-CBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .034 ohm
Avalanche Energy Rating (EAS): 605 mJ
Maximum Feedback Capacitance (Crss): 3.3 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Reference Standard: MIL-PRF-19500; MIL-STD-750; RH - 100K Rad(Si)
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