75 W Power Field Effect Transistors (FET) 935

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NVTYS002N03CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		30 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	675 A	320 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.2 W	175 Cel	SILICON		-55 Cel		MATTE TIN	.0031 ohm	29 A	DUAL	R-PDSO-X8	1	DRAIN				e3	30	260	43 pF	AEC-Q101
MTB1N100E	Onsemi	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		1 A								e0
MTP1N100E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ	1 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	9 ohm	1 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
NTD80N02T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0058 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD60N03-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	28 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	733 mJ	60 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0075 ohm	60 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
MTB3N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A		3 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	2.2 ohm	3 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
NTD80N02T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0058 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
NTD80N02G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0058 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD60N03T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	28 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	733 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0075 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD80N02-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0058 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
NTD80N02	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0058 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NVDD5894NLT4G	Onsemi	N-CHANNEL		YES	75 W										64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		64 A			1					e3	30	260
MTP12P10	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-65 Cel		Tin/Lead (Sn/Pb)	.3 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e0	30	235
MTB2P50ET4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	80 mJ	2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	6 ohm	2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
BUZ80A	Onsemi	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN LEAD		3 A								e0		235
MTP15N05EL	Onsemi	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.1 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
FDB6670AL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	114 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0065 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
NTD80N02-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0058 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3		260
MTB2P50E	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	80 mJ	2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	6 ohm	2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
MTB3N60E1	Onsemi	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		3 A								e0
NTD80N02032G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0058 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
NDB6030PL	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A		30 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.025 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
NTD80N02-001	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0058 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0		235
MTP3N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	290 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	2.2 ohm	3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
NTD60N03	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	28 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	733 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0075 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD80N02-032	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0058 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
MTP10N10E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	25 A	60 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.25 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e0	30	240
MTP4N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	280 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.5 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0	30	235
MTP6P20E	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	180 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	1 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
MTB3N60ET4	Onsemi	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN LEAD		3 A								e0		235
NTD4302-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	722 mJ	68 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.01 ohm	8.4 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
NTD25P03L1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.08 ohm	25 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NVTFS8D1N08HTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	216 A	113 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0083 ohm	61 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	46 pF	AEC-Q101
NTD30N02T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	50 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0145 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
STD5407NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	150 mJ	38 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.026 ohm	38 A	SINGLE	R-PSSO-G2	1	DRAIN				e3			80 pF
2SK3818-DL-E	Onsemi	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			74 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		74 A			1					e6
FDMS9410L-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		24 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	21 ns	-55 Cel	46 ns	TIN	.0065 ohm	50 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NTD25P03LRL	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.08 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
FQP24N08	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	230 mJ	24 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	24 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NVTFWS9D6P04M8LTAG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	311 A	220 mJ	64 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0095 ohm	64 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	31 pF	AEC-Q101
NTD25P03LG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.08 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTD25P03L	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.08 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NTD25P03LT4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.08 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NTD30N02	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	50 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0145 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
2SK3822	Onsemi	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			52 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							52 A
HUFA76419D3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			20 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	62 ns	-55 Cel	150 ns		.043 ohm	20 A	SINGLE	R-PSIP-T3		DRAIN			TO-251AA					AEC-Q101
2SK3818(SMP-FD)	Onsemi	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			74 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							74 A
NTD30N02T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	50 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0145 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.