Onsemi - NVTFWS8D1N08HTAG

  1. Home
  2. Onsemi - NVTFWS8D1N08HTAG
NVTFWS8D1N08HTAG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NVTFWS8D1N08HTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Package Style (Meter): SMALL OUTLINE; Maximum Feedback Capacitance (Crss): 46 pF;
Datasheet NVTFWS8D1N08HTAG Datasheet
In Stock362
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 61 A
Maximum Pulsed Drain Current (IDM): 216 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 75 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0083 ohm
Avalanche Energy Rating (EAS): 113 mJ
Other Names: 488-NVTFWS8D1N08HTAGTR
488-NVTFWS8D1N08HTAGCT
488-NVTFWS8D1N08HTAGDKR
Maximum Feedback Capacitance (Crss): 46 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
362 - -

Popular Products

Category Top Products

IRFB4110PBF by Infineon Technologies

IRFB4110PBF

Infineon Technologies

IRFB4110PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 670A and EAS of 190mJ, with a Drain Current (ID) of 180A. Operating in ENHANCEMENT MODE, it has a max power dissipation of 370W at 175°C.
IRF840SPBF by International Rectifier

IRF840SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Elements: 1;
FDD4685 by Onsemi

FDD4685

Onsemi

FDD4685 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for applications requiring high power dissipation up to 69W. Featuring a max Drain Current of 40A and an Avalanche Energy Rating of 121mJ, it operates in Enhancement Mode for efficient performance in various electronic circuits.
IRF530PBF by Vishay Intertechnology

IRF530PBF

Vishay Intertechnology

Vishay Intertechnology's IRF530PBF is a N-CHANNEL FET with 100V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 88W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
BSC028N06NSTATMA1 by Infineon Technologies

BSC028N06NSTATMA1

Infineon Technologies

BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
CSD18531Q5AT by Texas Instruments

CSD18531Q5AT

Texas Instruments

CSD18531Q5AT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 19A Drain Current, and 0.0058 ohm On Resistance. With an operating range of -55 to 150 °C, it's ideal for power management in various electronic devices.
2N7000 by Philips Semiconductors

2N7000

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
IRLML0100TRPBF-1 by Infineon Technologies

IRLML0100TRPBF-1

Infineon Technologies

Infineon's IRLML0100TRPBF-1 is a N-channel Power FET with 100V DS breakdown voltage and 7A IDM. Ideal for enhancement mode operation, it features a built-in diode, 0.22 ohm RDS(on), and is suitable for surface mount applications in power electronics.
STW4N150 by STMicroelectronics

STW4N150

STMicroelectronics

STW4N150 by STMicroelectronics is a N-CHANNEL FET with 1500V DS breakdown voltage, ideal for SWITCHING applications. It features 12A max pulsed drain current and 350mJ avalanche energy rating. The transistor operates in ENHANCEMENT MODE with 160W max power dissipation, making it suitable for high-power switching circuits.
IRF7205TRPBF by Infineon Technologies

IRF7205TRPBF

Infineon Technologies

IRF7205TRPBF by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 4.6A Drain Current, and 0.07 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE up to 150°C with GULL WING terminals.
BSP125H6327XTSA1 by Infineon Technologies

BSP125H6327XTSA1

Infineon Technologies

Infineon's BSP125H6327XTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.48A IDM, and 45 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance. Features include single configuration with built-in diode, gull wing terminals, and small outline package style.
SI7489DP-T1-E3 by Vishay Intertechnology

SI7489DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7489DP-T1-E3 is a P-CHANNEL FET with 100V DS Breakdown Voltage, 40A IDM, and 83W Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150 °C temperature range.
IRF3205ZPBF by Infineon Technologies

IRF3205ZPBF

Infineon Technologies

IRF3205ZPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 440A IDM, 250mJ EAS, and 0.0065 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 170W at 175°C.
BS170 by Philips Semiconductors

BS170

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STP80NF10FP by STMicroelectronics

STP80NF10FP

STMicroelectronics

STP80NF10FP by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 152A IDM and 350mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.015 ohm Drain-Source On Resistance and can handle up to 40W power dissipation.
AOD4185 by Alpha & Omega Semiconductor

AOD4185

Alpha & Omega Semiconductor

AOD4185 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage, 115A IDM, and 0.015 ohm RDS(ON). Ideal for power management applications requiring high drain current capabilities in a compact SMALL OUTLINE package.
JANTX2N6796 by International Rectifier

JANTX2N6796

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
PSMN5R5-60YS,115 by NXP Semiconductors

PSMN5R5-60YS,115

NXP Semiconductors

The NXP Semiconductors PSMN5R5-60YS,115 is a single N-channel power FET with 100A max drain current and 130W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as industrial motor control and power supplies.
IRF740SPBF by International Rectifier

IRF740SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 40 A; Minimum DS Breakdown Voltage: 400 V;
FDMS86350ET80 by Fairchild Semiconductor

FDMS86350ET80

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 187 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 5;