NTE2380 by Nte Electronics | Transistors

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Manufacturer	Nte Electronics
Manufacturer's Part Number	NTE2380
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE;
Datasheet	NTE2380 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	100 ns
Maximum Drain Current (ID):	2.5 A
Maximum Pulsed Drain Current (IDM):	10 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	75 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	90 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	75 W
Maximum Drain-Source On Resistance:	3 ohm
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	2 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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