Infineon Technologies - 2N6806

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2N6806 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number 2N6806
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Reference Standard: MILITARY STANDARD (USA); Package Body Material: METAL;
Datasheet 2N6806 Datasheet
In Stock664
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.5 A
Maximum Pulsed Drain Current (IDM): 28 A
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 2
Maximum Power Dissipation (Abs): 75 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .8 ohm
Avalanche Energy Rating (EAS): 66 mJ
JEDEC-95 Code: TO-204AA
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Reference Standard: MILITARY STANDARD (USA)
Maximum Drain Current (Abs) (ID): 6.5 A
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Pricing (USD)

Qty. Unit Price Ext. Price
664 $1.920 $1,274.880

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