IRHYS63234CM by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHYS63234CM
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Pulsed Drain Current (IDM): 48 A; Qualification: Not Qualified;
Datasheet	IRHYS63234CM Datasheet
In Stock	312

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	46 ns
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	48 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	75 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	56 ns
JESD-30 Code:	R-XSFM-P3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.22 ohm
Avalanche Energy Rating (EAS):	80 mJ
Maximum Feedback Capacitance (Crss):	2.2 pF
JEDEC-95 Code:	TO-257AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	250 V
Qualification:	Not Qualified
Reference Standard:	MIL-19500; RH - 300K Rad(Si)
Maximum Drain Current (Abs) (ID):	12 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
312	-	-

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