Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | JANSF2N7589U3 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Package Style (Meter): CHIP CARRIER; Package Shape: RECTANGULAR; |
| Datasheet | JANSF2N7589U3 Datasheet |
| In Stock | 480 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 19 A |
| Maximum Pulsed Drain Current (IDM): | 76 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 75 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-CBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .088 ohm |
| Avalanche Energy Rating (EAS): | 60 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 150 V |
| Qualification: | Qualified |
| Reference Standard: | MIL-19500; RH - 300K Rad(Si) |
| Maximum Drain Current (Abs) (ID): | 19 A |
