JANSR2N7465U3 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	JANSR2N7465U3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Additional Features: RADIATION HARDENED; Operating Mode: ENHANCEMENT MODE;
Datasheet	JANSR2N7465U3 Datasheet
In Stock	938

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	100 ns
Maximum Drain Current (ID):	5 A
Maximum Pulsed Drain Current (IDM):	20 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	75 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
Maximum Turn Off Time (toff):	116 ns
JESD-30 Code:	R-CBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.39 ohm
Avalanche Energy Rating (EAS):	150 mJ
Maximum Feedback Capacitance (Crss):	60 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	400 V
Qualification:	Qualified
Additional Features:	RADIATION HARDENED
Reference Standard:	MIL-19500/676
Maximum Drain Current (Abs) (ID):	5 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
938	-	-

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