Infineon Technologies - JANKCAF2N7383

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JANKCAF2N7383 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANKCAF2N7383
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Package Body Material: UNSPECIFIED; Maximum Pulsed Drain Current (IDM): 26 A;
Datasheet JANKCAF2N7383 Datasheet
In Stock629
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.5 A
Maximum Pulsed Drain Current (IDM): 26 A
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 75 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XSFM-P3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Avalanche Energy Rating (EAS): 171 mJ
JEDEC-95 Code: TO-257AA
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Qualified
Additional Features: RADIATION HARDENED
Reference Standard: MIL-19500/615C
Maximum Drain Current (Abs) (ID): 6.5 A
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