Infineon Technologies - IRHN250

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IRHN250 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHN250
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Drain Current (Abs) (ID): 18.5 A; Operating Mode: ENHANCEMENT MODE;
Datasheet IRHN250 Datasheet
In Stock759
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 75 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (ID): 18.5 A
Maximum Drain Current (Abs) (ID): 18.5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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