Infineon Technologies - BUZ12

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BUZ12 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BUZ12
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 37 A;
Datasheet BUZ12 Datasheet
In Stock633
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 75 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 37 A
Maximum Drain Current (Abs) (ID): 37 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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