Infineon Technologies - JANTXVR2N7545U3

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JANTXVR2N7545U3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXVR2N7545U3
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: TO-276AA;
Datasheet JANTXVR2N7545U3 Datasheet
In Stock989
NAME DESCRIPTION
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 12.5 A
JEDEC-95 Code: TO-276AA
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 100 V
Qualification: Qualified
Maximum Power Dissipation (Abs): 75 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 12.5 A
Maximum Drain-Source On Resistance: .205 ohm
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