Infineon Technologies - JANTXVR2N7545U3

JANTXVR2N7545U3 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	JANTXVR2N7545U3
Description	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: TO-276AA;
Datasheet	JANTXVR2N7545U3 Datasheet
In Stock	989

JANTXVR2N7545U3 Technical Details

NAME	DESCRIPTION
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	12.5 A
JEDEC-95 Code:	TO-276AA
Sub-Category:	Other Transistors
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	100 V
Qualification:	Qualified
Maximum Power Dissipation (Abs):	75 W
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	12.5 A
Maximum Drain-Source On Resistance:	.205 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
989	-	-

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