80 W Power Field Effect Transistors (FET) 223

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
BUZ92	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13 A	220 mJ	3.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Tin/Lead (Sn/Pb)	3 ohm	3.3 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
BUZ93	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14.5 A	220 mJ	3.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	2.5 ohm	3.6 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
IRLZ44ZLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	204 A	78 mJ	51 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	Matte Tin (Sn) - with Nickel (Ni) barrier	.0135 ohm	51 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	TO-262AA	e3	30	260
SPD18P06PG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	74.4 A	150 mJ	18.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	TIN	.13 ohm	18.6 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252AB	e3		260
SPD30N06S2L-23	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	TIN LEAD	.03 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e0
SPU18P06P	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	74.4 A	150 mJ	18.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	MATTE TIN	.13 ohm	18.6 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-251	e3
IRLZ44ZSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	204 A	78 mJ	51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	MATTE TIN OVER NICKEL	.0135 ohm	51 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
AUIRFZ44ZSTRR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	105 mJ	51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	MATTE TIN OVER NICKEL	.0139 ohm	51 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-263AB	e3
AUIRFZ44ZSTRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	105 mJ	51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	MATTE TIN OVER NICKEL	.0139 ohm	51 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-263AB	e3
AUIRFZ44ZS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	105 mJ	51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	MATTE TIN OVER NICKEL	.0139 ohm	51 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
IRLI3215PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	130 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	MATTE TIN OVER NICKEL	.184 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH RELIABILITY, AVALANCHE RATED	TO-220AB	e3
AUIRFZ44Z	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	105 mJ	51 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		.0139 ohm	51 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRFZ44ZLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	86 mJ	51 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	MATTE TIN OVER NICKEL	.0139 ohm	51 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-262AA	e3	30	260
IRFB4019PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	AMPLIFIER	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	51 A	73 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	TIN	.095 ohm	17 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
SPP18P06P	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	74.4 A	150 mJ	18.6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	MATTE TIN	.13 ohm	18.6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IRFZ44ZSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	86 mJ	51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	MATTE TIN OVER NICKEL	.0139 ohm	51 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
AUIRLZ44Z	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	204 A	78 mJ	51 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		.0135 ohm	51 A	SINGLE	R-PSFM-T3		DRAIN		ULTRA-LOW RESISTANCE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SPB18P06P	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	74.8 A	151 mJ	18.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	TIN LEAD	.13 ohm	18.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e0		220
TK4P55D(Q)	Toshiba	N-CHANNEL	SINGLE	YES	80 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				4 A
TK8Q60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	105 mJ	8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.5 ohm	8 A	SINGLE	R-PSIP-T3		DRAIN
TK70X04K3(TE24L)	Toshiba	N-CHANNEL	SINGLE	YES	80 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				70 A
TK10P60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	121 mJ	9.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.43 ohm	9.7 A	SINGLE	R-PSSO-G2		DRAIN
TK4P55D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	550 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	139 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1.88 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
TK10Q60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	121 mJ	9.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.43 ohm	9.7 A	SINGLE	R-PSIP-T3		DRAIN
TK380P65Y	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	96 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.38 ohm	9.7 A	SINGLE	R-PSSO-G2		DRAIN							2.5 pF
TK70X04K3(TE24L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	80 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				70 A
2SJ440-Y	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	AMPLIFIER	180 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			9 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			9 A	SINGLE	R-PSFM-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TK8P60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	105 mJ	8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.5 ohm	8 A	SINGLE	R-PSSO-G2		DRAIN
TK4Q60DA	Toshiba	N-CHANNEL	SINGLE	NO	80 W							1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				3.5 A
TK4P60DB	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.8 A	147 mJ	3.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		2 ohm	3.7 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK3880	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	19.5 A	375 mJ	6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1.7 ohm	6.5 A	SINGLE	R-PSFM-T3			Not Qualified
2SK2949(SM)	Toshiba	N-CHANNEL	SINGLE	YES	80 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				10 A
2SK2467-Y	Toshiba	N-CHANNEL	SINGLE	NO	80 W	PLASTIC/EPOXY	AMPLIFIER	180 V	THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1			9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	80 W	150 Cel	SILICON			9 A	SINGLE	R-PSFM-T3			Not Qualified				NOT SPECIFIED	240
2SK3499	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	400 V	FLAT	SQUARE	ENHANCEMENT MODE	1	40 A	360 mJ	10 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.55 ohm	10 A	DUAL	S-PDSO-F4		DRAIN	Not Qualified			e0
2SK3437	Toshiba	N-CHANNEL	SINGLE	NO	80 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				10 A
2SK2841(Q)	Toshiba	N-CHANNEL	SINGLE	NO	80 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				10 A
2SK2222	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		2.2 ohm	5 A	SINGLE	R-PSFM-T3			Not Qualified
2SK2542(Q)	Toshiba	N-CHANNEL	SINGLE	NO	80 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				8 A
2SK1930(SM)	Toshiba	N-CHANNEL	SINGLE	YES	80 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				4 A
2SK3453(Q)	Toshiba	N-CHANNEL	SINGLE	NO	80 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				10 A
2SK3437(SM)	Toshiba	N-CHANNEL	SINGLE	YES	80 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				10 A
2SK2841	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	360 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	80 W	150 Cel	SILICON		.55 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK3880(F)	Toshiba	N-CHANNEL	SINGLE	NO	80 W						ENHANCEMENT MODE	1			6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				6.5 A
2SK3879	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19.5 A		6.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1.7 ohm	6.5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK2542	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	312 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	80 W	150 Cel	SILICON		.85 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK3453(F)	Toshiba	N-CHANNEL	SINGLE	NO	80 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				10 A
2SK3453	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	420 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK2467	Toshiba	N-CHANNEL	SINGLE	NO	80 W	PLASTIC/EPOXY	AMPLIFIER	180 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			9 A	SINGLE	R-PSFM-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.