Toshiba - 2SK2467-Y

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2SK2467-Y by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK2467-Y
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Minimum DS Breakdown Voltage: 180 V; Transistor Element Material: SILICON;
Datasheet 2SK2467-Y Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 9 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 80 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 80 W
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 180 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 9 A
Peak Reflow Temperature (C): 240
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