84 W Power Field Effect Transistors (FET) 54

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NP50P04SDG-E1-AY	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	136 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	1.2 W	175 Cel	SILICON		MATTE TIN	.015 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-252	e3			420 pF	AEC-Q101
NVATS5A302PLZT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	197 mJ	80 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	TIN BISMUTH	.018 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN			e6	30	260		AEC-Q101
IPD80R360P7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A	34 mJ	13 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.36 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN		TO-252	e3
TPCA8122	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	180 A	257 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.0072 ohm	60 A	DUAL	S-PDSO-F5		DRAIN						770 pF
TPCA8083(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
TPCA8122.L1Q	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	180 A	257 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.0072 ohm	60 A	DUAL	S-PDSO-F5		DRAIN						770 pF
TPCA8083(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
TPCA8083(TE12L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
TPCA8083(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
NP50P04SLG-E1-AY	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	136 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.015 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-252		NOT SPECIFIED	NOT SPECIFIED
NP50P06SDG-E2-AY	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	102 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.023 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-252AA	e3
2SK4146-S19-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	84 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A		80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0101 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
NP50P06SDG-E1-AY	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	102 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.023 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-252AA	e3
NP50P04SLG-E2-AY	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	136 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.015 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN		TO-252		NOT SPECIFIED	NOT SPECIFIED
NP50P04SDG-E2-AY	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	136 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.015 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-252	e3
2SK3480-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	84 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	116 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.036 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB		10	260
2SK3435-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					80 A
2SK3813-Z-E2	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3480-ZJ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	116 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.036 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-263AB
2SK3430-ZJ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	137 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.015 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-263AB	e0
2SK3813-ZK-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3813-ZK-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3480-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	116 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.036 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			10	260
2SK3480-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A								NOT SPECIFIED	NOT SPECIFIED
2SK3430-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	84 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	137 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.015 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB		10	260
2SK3430-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	84 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	137 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.015 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	TO-262AA
2SK3435-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W							1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					80 A								NOT SPECIFIED	NOT SPECIFIED
2SK3480(0)-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A								NOT SPECIFIED	NOT SPECIFIED
2SK3430-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W							1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					80 A								NOT SPECIFIED	NOT SPECIFIED
2SK3430(0)-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					80 A
2SK3716-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3716-Z-E2	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3430	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	84 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	137 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.015 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB	e0
2SK3430(0)-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W							1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					80 A								NOT SPECIFIED	NOT SPECIFIED
2SK3435-ZJ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	96 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.022 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-263AB	e0
2SK3813-Z-E1	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3430-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	137 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.015 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		e0
2SK3813-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3814-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	102 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0105 ohm	60 A	SINGLE	R-PSSO-G2	1		Not Qualified	TO-252AA
2SK3813(0)-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3480-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	116 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.036 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		e0
2SK3814-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	84 W							1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A								10	260
2SK3430-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	84 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	137 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.015 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			10	260
2SK3716-Z-E1	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3716-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	84 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A
2SK3480-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	84 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	116 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.036 ohm	50 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	TO-262AA
2SK3814	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	84 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	102 mJ	60 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0105 ohm	60 A	SINGLE	R-PSIP-T3	1		Not Qualified	TO-251AA
2SK3814-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	84 W							1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					60 A								10	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.