Renesas Electronics - NP50P04SDG-E1-AY

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NP50P04SDG-E1-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NP50P04SDG-E1-AY
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 84 W; Transistor Application: SWITCHING; No. of Elements: 1;
Datasheet NP50P04SDG-E1-AY Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 150 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 84 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 1.2 W
Maximum Drain-Source On Resistance: .015 ohm
Avalanche Energy Rating (EAS): 136 mJ
Maximum Feedback Capacitance (Crss): 420 pF
JEDEC-95 Code: TO-252
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 50 A
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