90 W Power Field Effect Transistors (FET) 237

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STL16N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8 A

200 mJ

12 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.299 ohm

2 A

SINGLE

S-PSSO-N4

3

DRAIN

Not Qualified

e3

30

260

STP16N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

200 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.279 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

ULTRA-LOW RESISTANCE

TO-220AB

e3

STP12NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.41 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STD7N52DK3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

525 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

100 mJ

6.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.15 ohm

6 A

SINGLE

R-PSSO-G2

1

Not Qualified

ULTRA-LOW RESISTANCE

TO-252

e3

30

260

STP19NF20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

110 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.16 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STP12NK30Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

155 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STD18N55M

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

550 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

200 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.24 ohm

13 A

SINGLE

R-PSSO-G2

1

ULTRA-LOW RESISTANCE

TO-252

e3

30

260

STP20NE10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

170 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.1 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

STB18N55M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

550 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

200 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.24 ohm

13 A

SINGLE

R-PSSO-G2

1

ULTRA-LOW RESISTANCE

TO-263AB

e3

30

245

STP16NF25

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

100 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.235 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STB12NM60N-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.41 ohm

10 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

40

245

STB7N52K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

525 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

6.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.98 ohm

6.3 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

STD5NK60Z

STMicroelectronics

N-CHANNEL

SINGLE

NO

90 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

5 A

e3

STP3NB80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10.4 A

176 mJ

2.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6.5 ohm

2.6 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STB30NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

275 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.045 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

STP18N55M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

200 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.24 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

ULTRA-LOW RESISTANCE

TO-220AB

e3

STP16N10L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

150 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.16 ohm

16 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STD6NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22.4 A

180 mJ

5.6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

5.6 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252

e3

STB11NM60N-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.45 ohm

10 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

TO-262AA

e3

STP3HNK90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

200 mJ

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.2 ohm

3 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STB16N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

200 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.279 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263AB

e3

30

245

STI17NF25

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

100 mJ

17 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.165 ohm

17 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

40

245

STD7N52K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

525 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

6.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.98 ohm

6.3 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

STD7N90K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

230 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.81 ohm

7 A

SINGLE

R-PSSO-G2

DRAIN

BULK: 2500

TO-252

NOT SPECIFIED

NOT SPECIFIED

1.2 pF

STD20N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

110 mJ

18 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.125 ohm

18 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

STP18N10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

80 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.14 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP5NK60Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

220 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.6 ohm

5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP6NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22.4 A

180 mJ

5.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

5.6 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STD20N20T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

110 mJ

18 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.125 ohm

18 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

STD10NM65N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

300 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.48 ohm

9 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

STW16N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

200 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.279 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

ULTRA-LOW RESISTANCE

TO-247

e3

STP17NF25

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

100 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.165 ohm

17 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STB30NF10T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

275 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.045 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

30

245

STP6N62K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

620 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

140 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

ULTRA LOW-ON RESISTANCE

TO-220AB

e3

STP14NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

18 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.32 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP25N05

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

125 mJ

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

95 W

175 Cel

SILICON

175 ns

MATTE TIN

.065 ohm

25 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

200 pF

STW12NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN/TIN SILVER COPPER

.41 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e3/e1

NOT SPECIFIED

NOT SPECIFIED

STI13NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

200 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.36 ohm

11 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

STD5N95K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

950 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

100 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

3.5 ohm

4 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

30

260

STI11NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

10 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

STP40N03L-20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

300 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

40 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP13NM60N-H

STMicroelectronics

N-CHANNEL

SINGLE

NO

90 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

11 A

e3

STL18N55M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

550 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

9.6 A

200 mJ

13 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.24 ohm

2.4 A

SINGLE

S-PSSO-N4

3

DRAIN

Not Qualified

e3

30

260

STP3NK100Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

110 mJ

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

6 ohm

2.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STF11NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STB19N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

110 mJ

15 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.16 ohm

15 A

SINGLE

R-PSSO-G2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STB11NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

10 A

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

STP38N06

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

152 A

300 mJ

38 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.03 ohm

38 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.