STP6N62K3 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STP6N62K3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Maximum Drain-Source On Resistance: 1.2 ohm; Maximum Drain Current (ID): 5.5 A;
Datasheet	STP6N62K3 Datasheet
In Stock	1,100

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5.5 A
Maximum Pulsed Drain Current (IDM):	22 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	90 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	1.2 ohm
Avalanche Energy Rating (EAS):	140 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	620 V
Qualification:	Not Qualified
Additional Features:	ULTRA LOW-ON RESISTANCE
Maximum Drain Current (Abs) (ID):	5.5 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,100	$1.870	$2,057.000

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