NXP Semiconductors Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NX2020N2

NXP Semiconductors

934000520115

NXP Semiconductors

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

10 ohm

DUAL

R-PDSO-G4

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

PHP54N06T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

118 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

217 A

115 mJ

54 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.02 ohm

54 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

934057699118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

407 A

241 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.008 ohm

101 A

SINGLE

R-PSSO-G2

DRAIN

BLF2425M7L250P,118

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

934056283118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

562 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0099 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

934057018127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

433 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.01 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PHP110NQ08LT,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

560 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.00995 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-220AB

e3

934057041118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0036 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

PHX1N60

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6.8 A

84 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

4.4 ohm

1.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

934055537127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

30 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.07 ohm

17 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BUK437-500B

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

934056573115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

47 A

100 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.036 ohm

12 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

934064689118

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFM-F4

SOURCE

ESD PROTECTION

934057095118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

902 A

1600 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0031 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

934066646118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

713 A

384 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0042 ohm

120 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

934066659127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

216 A

40.5 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

54 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

TO-262AA

AEC-Q101; IEC-60134

PHKD6N02LT,118

NXP Semiconductors

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

6 A

2

e4

30

260

PHP7N60E127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

570 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-220AB

BUK563-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

70 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

SILICON

80 ns

170 ns

.18 ohm

13 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

120 pF

PHX18NQ11T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31.2 W

PLASTIC/EPOXY

SWITCHING

110 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50.2 A

56 mJ

12.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.09 ohm

12.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

PHP23NQ11T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

110 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

93 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.07 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PH4025L,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

46.4 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

150 mJ

99 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0062 ohm

99 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

LOW CONDUCTION LOSS

MO-235

e3

934066987115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

50 A

21 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.089 ohm

12.5 A

DUAL

R-PDSO-G6

DRAIN

AVALANCHE RATED

AEC-Q101; IEC-60134

PHP2N60

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

11 A

84 mJ

2.8 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.4 ohm

2.8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

PHP27NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

107 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

128 mJ

28 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.05 ohm

28 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

934057113118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

438 A

629 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.01 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

BUK545-60B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

90 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

190 ns

365 ns

.055 ohm

18 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

275 pF

934056885127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

208 A

115 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.022 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

PMPB40SNA,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

3.5 W

ENHANCEMENT MODE

1

12.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

12.9 A

1

e3

30

260

934057021118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0177 ohm

68.9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

934064149115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

86 A

18 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.045 ohm

24 A

SINGLE

R-PSSO-G4

DRAIN

MO-235

BUK444-200A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

50 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

5.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

PHP21N06LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

69 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

76 A

34 mJ

21 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.075 ohm

19 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

TO-220AB

e3

934063295127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

636 A

292 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.004 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

BUK444-800A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5.6 A

1.4 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

60 ns

105 ns

6 ohm

1.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

30 pF

BUK466-200A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

76 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.16 ohm

19 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

PH8230

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0082 ohm

30 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

MO-235

PHD22NQ20T,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42.2 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.12 ohm

21.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

PHKD3NQ10T/T3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

12 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.09 ohm

3 A

DUAL

R-PDSO-G8

Not Qualified

BUK545-60A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

90 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

190 ns

365 ns

.042 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

275 pF

PHP125N06LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

500 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.008 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

TO-220AB

934055644127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

503 A

670 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0085 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

934056478118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

182 A

120 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.029 ohm

45 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

934056245118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

129 A

76 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.038 ohm

32 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

934056703118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

173 A

123 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.025 ohm

43 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

PH20100S

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

134 A

250 mJ

34.3 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.023 ohm

34.3 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

BUK100-50GL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

13.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.125 ohm

13.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IEC-134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.