Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
106 W |
ENHANCEMENT MODE |
1 |
76 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
76 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
45 W |
ENHANCEMENT MODE |
1 |
50 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
50 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
63 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
150 mJ |
15 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.11 ohm |
17 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
110 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
320 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.015 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
ENHANCEMENT MODE |
88 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
225 Cel |
88 A |
||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
196 A |
145 mJ |
48 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
185 Cel |
SILICON |
TIN |
.027 ohm |
48 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
51 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
73 A |
36 mJ |
18 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.077 ohm |
18 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
357 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
120 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
182 W |
ENHANCEMENT MODE |
1 |
75 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
75 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
182 W |
ENHANCEMENT MODE |
1 |
75 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
75 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
105 W |
ENHANCEMENT MODE |
1 |
61.8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
61.8 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
45 W |
ENHANCEMENT MODE |
1 |
33 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
33 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
114 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
219 A |
120 mJ |
55 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.02 ohm |
55 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
203 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
516 A |
494 mJ |
75 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0071 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
245 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
157 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
383 A |
241 mJ |
95 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.01 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
245 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
357 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
120 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
96 W |
ENHANCEMENT MODE |
1 |
31 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
31 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
293 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
120 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
182 W |
ENHANCEMENT MODE |
1 |
75 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
75 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
62 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
81 A |
72 mJ |
20 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.081 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
195 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
100 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
167 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
100 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
95 W |
ENHANCEMENT MODE |
1 |
79 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
79 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
156 A |
300 mJ |
39 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.057 ohm |
39 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
306 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
120 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
338 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Tin (Sn) |
120 A |
e3 |
||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
88 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
580 A |
103 mJ |
100 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.0039 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
306 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
100 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
263 W |
ENHANCEMENT MODE |
1 |
130 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
130 A |
||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
25 W |
150 Cel |
SILICON |
60 ns |
145 ns |
.2 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
100 pF |
||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
247 A |
21 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0122 ohm |
62 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
MO-235 |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
136 A |
122.5 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.04 ohm |
34 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
25 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.15 ohm |
5.5 A |
DUAL |
R-PDSO-G4 |
DRAIN |
|||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.4 A |
1.6 A |
4 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
45 ns |
45 ns |
.35 ohm |
1.6 A |
DUAL |
R-PDSO-G4 |
DRAIN |
Not Qualified |
50 pF |
||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
30 W |
150 Cel |
SILICON |
105 ns |
205 ns |
1.5 ohm |
2.9 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
70 pF |
||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
217 A |
115 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.021 ohm |
54 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e3 |
||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
50 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.1 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
YES |
ENHANCEMENT MODE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
|||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
136 W |
PLASTIC/EPOXY |
SWITCHING |
110 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
115 mJ |
35 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.04 ohm |
35 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
14 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.1 ohm |
3.5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
MS-012AA |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
475 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0071 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
593 A |
199 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0048 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
AVALANCHE RATED |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
263 A |
120 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.017 ohm |
66 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
213 A |
120 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.026 ohm |
53 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
190 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.8 ohm |
2.7 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
FAST SWITCHING |
TO-220AB |
|||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
80 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
125 W |
175 Cel |
SILICON |
175 ns |
190 ns |
.024 ohm |
50 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
200 pF |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
37.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
74 mJ |
20 A |
2 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.056 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-252AA |
||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
680 A |
537 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.005 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.