NXP Semiconductors Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK763R8-80E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

357 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK7Y102-100B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

15 A

1

e3

30

260

BUK9Y38-100E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

45.1 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

PURE TIN

.038 ohm

30 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

AEC-Q101; IEC-60134

BUK9Y38-100E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

94.9 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

30 A

1

e3

30

260

PMXB56ENZ

NXP Semiconductors

N-CHANNEL

SINGLE

8.33 W

ENHANCEMENT MODE

1

3.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

BUK9Y53-100B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

23 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

23 A

1

e3

30

260

PSMN015-100P,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

320 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.015 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

PSMN4R0-40YS,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

472 A

77 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0042 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

PSMN7R0-30MLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

57 W

ENHANCEMENT MODE

1

67 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

67 A

1

e3

30

260

BUK7Y3R5-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

167 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PMXB43UNEZ

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.07 W

ENHANCEMENT MODE

1

3.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

PSMN027-100PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

103 W

ENHANCEMENT MODE

1

37 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

37 A

e3

PSMN4R4-80PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

306 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

1

e3

BUK7Y15-60E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

212 A

42.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.015 ohm

53 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

AEC-Q101; IEC-60134

NX3020NAK,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.36 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.2 A

1

e3

30

260

PSMN2R7-30BL,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

730 A

300 mJ

100 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0037 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

245

IEC-60134

PSMN8R7-80BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

170 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

90 A

1

e3

30

245

BLF6G27S-45,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

BLF6G27S-45,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

BUK553-60A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

45 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

SILICON

150 ns

195 ns

.085 ohm

21 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

160 pF

BUK9Y14-80E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

79.6 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.015 ohm

62 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

AEC-Q101; IEC-60134

PSMN030-60YS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

116 A

23 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

PURE TIN

.0247 ohm

29 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

PSMN069-100YS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

24 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

PURE TIN

.0724 ohm

17 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

PSMN070-200B,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

462 mJ

33 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.07 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

PSMN4R0-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

69 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

396 A

41 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0065 ohm

99 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

PSMN5R2-60YL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

479 A

127 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.006 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

IEC-60134

BLF888,112

NXP Semiconductors

N-CHANNEL

500 W

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

30

260

BSP130,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

.3 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

8 ohm

.3 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

BUK553-100B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

70 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

SILICON

80 ns

170 ns

.22 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

120 pF

BUK553-60B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

45 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

75 W

175 Cel

SILICON

150 ns

195 ns

.1 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

160 pF

BUK9K89-100E,115

NXP Semiconductors

N-CHANNEL

YES

38 W

ENHANCEMENT MODE

12.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

12.5 A

1

e3

30

260

BUK9Y19-55B,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

184 A

80 mJ

46 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.021 ohm

46 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-235

e3

30

260

BUK9Y43-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

22 A

1

e3

30

260

IRF530N,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

63 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

150 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.11 ohm

17 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PMDT290UNE,115

NXP Semiconductors

N-CHANNEL

YES

1.09 W

ENHANCEMENT MODE

.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.8 A

1

e3

30

260

PSMN013-100YSE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

330 A

125 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

PURE TIN

.013 ohm

82 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

IEC-60134

BLF645,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

32 A

BLF881,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

BLF881S,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

BSS83,235

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.23 W

ENHANCEMENT MODE

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

TIN

.05 A

e3

30

260

BUK7E3R5-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

293 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

PMDPB30XN,115

NXP Semiconductors

N-CHANNEL

YES

8.33 W

ENHANCEMENT MODE

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

4 A

1

e3

30

260

PSMN2R6-60PSQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

326 W

ENHANCEMENT MODE

1

150 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

150 A

PSMN3R0-30YLDX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

91 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BLF6G20S-45,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

13 A

PMPB20EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

7.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7.2 A

1

e3

30

260

PSMN020-30MLCX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

33 W

ENHANCEMENT MODE

1

31.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

31.8 A

SI4410DY,518

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0135 ohm

10 A

DUAL

R-PDSO-G8

2

Not Qualified

MS-012AA

e4

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.